Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures

We report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxy...

Full description

Bibliographic Details
Authors: Bagdzevicius, Sarunas|||0000-0001-5477-259X, Boudard, Michel, Caicedo Roque, Jose Manuel|||0000-0002-5192-4989, Mescot, Xavier, Rodríguez Lamas, Raquel|||0000-0002-0137-8174, Santiso, José|||0000-0003-4274-2101, Burriel, Mónica|||0000-0002-7973-7421
Format: article
Publication Date:2019
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:222262
Online Access:https://ddd.uab.cat/record/222262
https://dx.doi.org/urn:doi:10.1016/j.ssi.2019.01.027
Access Level:Open access
Keyword:Resistive switching
Perovskite memristors
Interface-type switching
ReRAM
Multilevel ReRAM
Valence change mechanism
id ES_f5afd627a8f82308966e2a3f37d2bcf4
oai_identifier_str oai:ddd.uab.cat:222262
network_acronym_str ES
network_name_str España
repository_id_str
spelling Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructuresBagdzevicius, Sarunas|||0000-0001-5477-259XBoudard, MichelCaicedo Roque, Jose Manuel|||0000-0002-5192-4989Mescot, XavierRodríguez Lamas, Raquel|||0000-0002-0137-8174Santiso, José|||0000-0003-4274-2101Burriel, Mónica|||0000-0002-7973-7421Resistive switchingPerovskite memristorsInterface-type switchingReRAMMultilevel ReRAMValence change mechanismWe report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxygen content allowed engineering this perovskite heterostructure with controlled interfaces creating two symmetric junctions. It has been proved that the resistance state of the device can be reproducibly varied by both continuous voltage sweeps and by electrical pulses. The symmetric devices show slightly non-symmetric resistance profiles, which can be explained by a valence change resistive switching model, and presented promising multilevel properties required for novel memories and neuromorphic computing. 22019-01-0120192019-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/222262https://dx.doi.org/urn:doi:10.1016/j.ssi.2019.01.027reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengopen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2222622026-06-06T12:50:31Z
dc.title.none.fl_str_mv Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
title Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
spellingShingle Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
Bagdzevicius, Sarunas|||0000-0001-5477-259X
Resistive switching
Perovskite memristors
Interface-type switching
ReRAM
Multilevel ReRAM
Valence change mechanism
title_short Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
title_full Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
title_fullStr Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
title_full_unstemmed Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
title_sort Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
dc.creator.none.fl_str_mv Bagdzevicius, Sarunas|||0000-0001-5477-259X
Boudard, Michel
Caicedo Roque, Jose Manuel|||0000-0002-5192-4989
Mescot, Xavier
Rodríguez Lamas, Raquel|||0000-0002-0137-8174
Santiso, José|||0000-0003-4274-2101
Burriel, Mónica|||0000-0002-7973-7421
author Bagdzevicius, Sarunas|||0000-0001-5477-259X
author_facet Bagdzevicius, Sarunas|||0000-0001-5477-259X
Boudard, Michel
Caicedo Roque, Jose Manuel|||0000-0002-5192-4989
Mescot, Xavier
Rodríguez Lamas, Raquel|||0000-0002-0137-8174
Santiso, José|||0000-0003-4274-2101
Burriel, Mónica|||0000-0002-7973-7421
author_role author
author2 Boudard, Michel
Caicedo Roque, Jose Manuel|||0000-0002-5192-4989
Mescot, Xavier
Rodríguez Lamas, Raquel|||0000-0002-0137-8174
Santiso, José|||0000-0003-4274-2101
Burriel, Mónica|||0000-0002-7973-7421
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Resistive switching
Perovskite memristors
Interface-type switching
ReRAM
Multilevel ReRAM
Valence change mechanism
topic Resistive switching
Perovskite memristors
Interface-type switching
ReRAM
Multilevel ReRAM
Valence change mechanism
description We report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxygen content allowed engineering this perovskite heterostructure with controlled interfaces creating two symmetric junctions. It has been proved that the resistance state of the device can be reproducibly varied by both continuous voltage sweeps and by electrical pulses. The symmetric devices show slightly non-symmetric resistance profiles, which can be explained by a valence change resistive switching model, and presented promising multilevel properties required for novel memories and neuromorphic computing.
publishDate 2019
dc.date.none.fl_str_mv 2
2019-01-01
2019
2019-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/222262
https://dx.doi.org/urn:doi:10.1016/j.ssi.2019.01.027
url https://ddd.uab.cat/record/222262
https://dx.doi.org/urn:doi:10.1016/j.ssi.2019.01.027
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424639280676864
score 15,228081

Similar Items