Lead-Free Bismuth Halide Perovskite Memristors: Low-Voltage Switching and Physical Modeling of Resistive Hysteresis
[EN] This work reports the resistive switching performance and physical modeling analysis of hysteresis in lead-free all-inorganic mixed halide perovskite memristors. Ag/Cs3Bi2I9(-)xBrx/ITO memristors with I-rich (x = 3) and Br-rich (x = 6) crystallize in a layered trigonal phase and form smooth and...
| Autores: | , , , , |
|---|---|
| Tipo de documento: | artigo |
| Data de publicação: | 2026 |
| País: | España |
| Recursos: | Universitat Politècnica de València (UPV) |
| Repositório: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglês |
| OAI Identifier: | oai:dnet:riunet______::a049673507a4000335aab52f66b6d7ae |
| Acesso em linha: | https://riunet.upv.es/handle/10251/233511 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Conductance-activated quasi-lineal memristor (CALM) Halide perovskites Lead-free perovskite memristor ReRAM Resistive switching |
| Resumo: | [EN] This work reports the resistive switching performance and physical modeling analysis of hysteresis in lead-free all-inorganic mixed halide perovskite memristors. Ag/Cs3Bi2I9(-)xBrx/ITO memristors with I-rich (x = 3) and Br-rich (x = 6) crystallize in a layered trigonal phase and form smooth and uniform films confirmed by XRD, SEM, and AFM analyses. Both devices exhibit reproducible bipolar switching with below 0.3 V SET/RESET voltages, ON/OFF ratios above 101, and excellent cycling and retention stability. Crucially, this study provides the first direct experimental validation of the conductance-activated quasi-linear memristor (CALM) framework in bismuth-based halide PSK memristors, showing quantitative agreement between measured and simulated I-V hysteresis. Electrical analysis combined with scan-rate-dependent I-V physical modeling reveals ion-migration-controlled filament dynamics. I-rich layers form uniform and stable filaments due to stronger Bi-I bonding and lower density of mobile halide vacancies, produced uniform and stable conductive filaments. In contrast, Br-rich memristors exhibit ultralow voltage operations enabled by enhanced vacancy mobility, albeit with slightly broader switching thresholds. These findings demonstrate that compositional engineering in Pb-free bismuth PSK enables a balance between low-voltage operation and stable switching by the incorporation of Br- ions. The combined experimental-modeling approach establishes a robust lead-free materials platform for next-generation energy-efficient non-volatile memory and neuromorphic electronics. |
|---|