Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

The following article appeared in Journal of Applied Physics 110.9 (2011): 093509 and may be found at http://scitation.aip.org/content/aip/journal/jap/110/9/10.1063/1.3656986

Detalles Bibliográficos
Autores: Mönig, Harry, Kaufmann, Christian Alexander, Fischer, Ch Herbert, Grimm, Alexander, Caballero, Raquel, Johnson, Benjamin D., Eicke, Axel, Lux-Steiner, Martha Ch H, Lauermann, Iver
Tipo de recurso: artículo
Fecha de publicación:2011
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/662079
Acceso en línea:http://hdl.handle.net/10486/662079
https://dx.doi.org/10.1063/1.3656986
Access Level:acceso abierto
Palabra clave:Gallium
Copper
Thin film growth
Indium
Metallic thin films
Física
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spelling Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperaturesMönig, HarryKaufmann, Christian AlexanderFischer, Ch HerbertGrimm, AlexanderCaballero, RaquelJohnson, Benjamin D.Eicke, AxelLux-Steiner, Martha Ch HLauermann, IverGalliumCopperThin film growthIndiumMetallic thin filmsFísicaThe following article appeared in Journal of Applied Physics 110.9 (2011): 093509 and may be found at http://scitation.aip.org/content/aip/journal/jap/110/9/10.1063/1.3656986Cu(In,Ga)Se2 films are used as absorber layers in chalcopyrite thin film solar cells. As the gallium concentration in the absorber can be used to control the band gap, there have been many efforts to vary the gallium concentration in depth to gain an optimum balance of light absorption, carrier collection, and recombination at different depths of the absorber film, leading to improved quantum efficiency. In this study, we investigate the effect of the maximum substrate temperature during film growth on the depth dependent gallium concentration. For the in-depth gallium concentration analyses, we use two techniques, covering complementary depth ranges. Angle dependent soft x-ray emission spectroscopy provides access to information depths between 20 and 470 nm, which covers the depth range of the space charge region, where most of the photoexcited carriers are generated. Therefore, this depth range is of particular interest. To complement this investigation we use secondary neutral mass spectrometry, which destructively probes the whole thickness of the absorber (≈2 µm). The two methods show increasingly pronounced gallium and indium gradients with decreasing maximum substrate temperature. The probing of the complementary depth ranges of the absorbers gives a consistent picture of the in-depth gallium distribution, which provides a solid basis for a comprehensive discussion about the effect of a reduced substrate temperature on the formation of gallium gradients in Cu(In,Ga)Se2 and the device performance of the corresponding reference solar cells.The authors acknowledge the support of the European Commission in the framework of the ATHLET-project (Project No. 019670).American Institute of Physics.Departamento de Física AplicadaFacultad de Ciencias20112011-11-01research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/662079https://dx.doi.org/10.1063/1.3656986reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/6620792026-06-23T12:46:27Z
dc.title.none.fl_str_mv Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
title Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
spellingShingle Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
Mönig, Harry
Gallium
Copper
Thin film growth
Indium
Metallic thin films
Física
title_short Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
title_full Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
title_fullStr Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
title_full_unstemmed Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
title_sort Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
dc.creator.none.fl_str_mv Mönig, Harry
Kaufmann, Christian Alexander
Fischer, Ch Herbert
Grimm, Alexander
Caballero, Raquel
Johnson, Benjamin D.
Eicke, Axel
Lux-Steiner, Martha Ch H
Lauermann, Iver
author Mönig, Harry
author_facet Mönig, Harry
Kaufmann, Christian Alexander
Fischer, Ch Herbert
Grimm, Alexander
Caballero, Raquel
Johnson, Benjamin D.
Eicke, Axel
Lux-Steiner, Martha Ch H
Lauermann, Iver
author_role author
author2 Kaufmann, Christian Alexander
Fischer, Ch Herbert
Grimm, Alexander
Caballero, Raquel
Johnson, Benjamin D.
Eicke, Axel
Lux-Steiner, Martha Ch H
Lauermann, Iver
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Facultad de Ciencias
dc.subject.none.fl_str_mv Gallium
Copper
Thin film growth
Indium
Metallic thin films
Física
topic Gallium
Copper
Thin film growth
Indium
Metallic thin films
Física
description The following article appeared in Journal of Applied Physics 110.9 (2011): 093509 and may be found at http://scitation.aip.org/content/aip/journal/jap/110/9/10.1063/1.3656986
publishDate 2011
dc.date.none.fl_str_mv 2011
2011-11-01
dc.type.none.fl_str_mv research article
http://purl.org/coar/resource_type/c_2df8fbb1
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10486/662079
https://dx.doi.org/10.1063/1.3656986
url http://hdl.handle.net/10486/662079
https://dx.doi.org/10.1063/1.3656986
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics.
publisher.none.fl_str_mv American Institute of Physics.
dc.source.none.fl_str_mv reponame:Biblos-e Archivo. Repositorio Institucional de la UAM
instname:Universidad Autónoma de Madrid
instname_str Universidad Autónoma de Madrid
reponame_str Biblos-e Archivo. Repositorio Institucional de la UAM
collection Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,223283

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