Structural and electrical properties of indium oxide thin films grown by pulsed laser deposition in oxygen ambient
We report results of structural, optical and electrical transport studies of indium oxide (IO) thin films grown by Pulsed Laser Deposition (PLD) under various oxygen gas pressures and using different substrates at 350° C. We find that the morphology and electrical resistivity of these films which ar...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/148737 |
| Acceso en línea: | http://hdl.handle.net/10261/148737 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium oxide Thin film Electrical properties |
| Sumario: | We report results of structural, optical and electrical transport studies of indium oxide (IO) thin films grown by Pulsed Laser Deposition (PLD) under various oxygen gas pressures and using different substrates at 350° C. We find that the morphology and electrical resistivity of these films which are highly transparent changes drastically as Opressure increases into mbar range, irrespective of substrate. A systematic increase in resistivity, coming mainly from a drop in the electron concentration, is observed as oxygen pressure varies from 0.0004 to 1 mbar. This could permit modulation of IO thin–films’ electrical parameters by more than three orders of magnitude suggesting that PLD grown films could be an attractive material for optoelectronic applications. |
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