Porous GaN produced by CVD: progress in development and characterization
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| Format: | doctoral thesis |
| Status: | Published version |
| Publication Date: | 2017 |
| Country: | España |
| Institution: | Universitat Rovira i virgili (URV) |
| Repository: | Repositori Institucional de la Universitat Rovira i Virgili |
| OAI Identifier: | oai:urv.cat:TDX:2661 |
| Online Access: | https://hdl.handle.net/20.500.11797/TDX2661 http://hdl.handle.net/10803/457707 |
| Access Level: | Open access |
| Keyword: | 546 544 538.9 535 Ciències chemical vapor deposition porous GaN GaN poroso deposició química de vapor semiconductor GaN porós |
| Description not available. |