A physically based model for resistive memories including a detailed temperature and variability description

Producción Científica

Detalhes bibliográficos
Autores: González-Cordero, G., González, M.B., García García, Héctor, Campabadal Segura, Francesca, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Jiménez-Molinos, Francisco, Roldán, J.B.
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2017
País:España
Recursos:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/65983
Acesso em linha:https://doi.org/10.1016/j.mee.2017.04.019
https://uvadoc.uva.es/handle/10324/65983
Access Level:acceso abierto
Palavra-chave:Resistive RAM
ReRAM
Physical model
Stochastic variability
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spelling A physically based model for resistive memories including a detailed temperature and variability descriptionGonzález-Cordero, G.González, M.B.García García, HéctorCampabadal Segura, FrancescaDueñas Carazo, SalvadorCastán Lanaspa, María HelenaJiménez-Molinos, FranciscoRoldán, J.B.Resistive RAMReRAMPhysical modelStochastic variabilityProducción CientíficaA new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead to different resistive states. The validity of the model has been proved for different technologies of metal-insulator-metal bipolar resistive memories. The model can be implemented in Verilog-A for circuit simulation purposes.Spanish Ministry of Economy and Competitiveness and the FEDER Program through projects TEC2014-52152-C3-1-R, TEC2014-52152-C3-2-R, TEC2014-52152-C3-3-R and TEC2014-54906-JINELSEVIER2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1016/j.mee.2017.04.019https://uvadoc.uva.es/handle/10324/65983reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidEspañolhttps://www.sciencedirect.com/science/article/pii/S0167931717301533?via%3Dihubinfo:eu-repo/semantics/openAccessoai:uvadoc.uva.es:10324/659832026-06-13T12:44:47Z
dc.title.none.fl_str_mv A physically based model for resistive memories including a detailed temperature and variability description
title A physically based model for resistive memories including a detailed temperature and variability description
spellingShingle A physically based model for resistive memories including a detailed temperature and variability description
González-Cordero, G.
Resistive RAM
ReRAM
Physical model
Stochastic variability
title_short A physically based model for resistive memories including a detailed temperature and variability description
title_full A physically based model for resistive memories including a detailed temperature and variability description
title_fullStr A physically based model for resistive memories including a detailed temperature and variability description
title_full_unstemmed A physically based model for resistive memories including a detailed temperature and variability description
title_sort A physically based model for resistive memories including a detailed temperature and variability description
dc.creator.none.fl_str_mv González-Cordero, G.
González, M.B.
García García, Héctor
Campabadal Segura, Francesca
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Jiménez-Molinos, Francisco
Roldán, J.B.
author González-Cordero, G.
author_facet González-Cordero, G.
González, M.B.
García García, Héctor
Campabadal Segura, Francesca
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Jiménez-Molinos, Francisco
Roldán, J.B.
author_role author
author2 González, M.B.
García García, Héctor
Campabadal Segura, Francesca
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Jiménez-Molinos, Francisco
Roldán, J.B.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Resistive RAM
ReRAM
Physical model
Stochastic variability
topic Resistive RAM
ReRAM
Physical model
Stochastic variability
description Producción Científica
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1016/j.mee.2017.04.019
https://uvadoc.uva.es/handle/10324/65983
url https://doi.org/10.1016/j.mee.2017.04.019
https://uvadoc.uva.es/handle/10324/65983
dc.language.none.fl_str_mv Español
language_invalid_str_mv Español
dc.relation.none.fl_str_mv https://www.sciencedirect.com/science/article/pii/S0167931717301533?via%3Dihub
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv ELSEVIER
publisher.none.fl_str_mv ELSEVIER
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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