Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

Producción Científica

Detalles Bibliográficos
Autores: García García, Héctor, Jiménez Molinos, Francisco, Vinuesa Sanz, Guillermo, Bargalló González, Mireia, Roldán, Juan B., Miranda, Enrique, Campabadal Segura, Francesca, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/58643
Acceso en línea:https://doi.org/10.1016/j.sse.2022.108385
https://uvadoc.uva.es/handle/10324/58643
Access Level:acceso abierto
Palabra clave:Memristors
Resisitive switching
ReRAM
Set processes
Reset processes
33 Ciencias Tecnológicas
22 Física
id ES_6caa81a8425332d8dceadf20b2fd7641
oai_identifier_str oai:uvadoc.uva.es:10324/58643
network_acronym_str ES
network_name_str España
repository_id_str
spelling Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor dischargeGarcía García, HéctorJiménez Molinos, FranciscoVinuesa Sanz, GuillermoBargalló González, MireiaRoldán, Juan B.Miranda, EnriqueCampabadal Segura, FrancescaCastán Lanaspa, María HelenaDueñas Carazo, SalvadorMemristorsResisitive switchingReRAMSet processesReset processes33 Ciencias Tecnológicas22 FísicaProducción CientíficaIn this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.Ministerio de Ciencia, Innovación y Universidades y programa FEDER (proyectos TEC2017-84321-C4-1-R, TEC2017-84321-C4-2-R, TEC2017-84321-C4-3-R y TEC2017-84321-C4-4-R)Elsevier2022info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1016/j.sse.2022.108385https://uvadoc.uva.es/handle/10324/58643reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://www.sciencedirect.com/science/article/pii/S0038110122001575info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/586432026-06-13T12:44:47Z
dc.title.none.fl_str_mv Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
title Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
spellingShingle Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
García García, Héctor
Memristors
Resisitive switching
ReRAM
Set processes
Reset processes
33 Ciencias Tecnológicas
22 Física
title_short Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
title_full Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
title_fullStr Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
title_full_unstemmed Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
title_sort Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
dc.creator.none.fl_str_mv García García, Héctor
Jiménez Molinos, Francisco
Vinuesa Sanz, Guillermo
Bargalló González, Mireia
Roldán, Juan B.
Miranda, Enrique
Campabadal Segura, Francesca
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
author García García, Héctor
author_facet García García, Héctor
Jiménez Molinos, Francisco
Vinuesa Sanz, Guillermo
Bargalló González, Mireia
Roldán, Juan B.
Miranda, Enrique
Campabadal Segura, Francesca
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
author_role author
author2 Jiménez Molinos, Francisco
Vinuesa Sanz, Guillermo
Bargalló González, Mireia
Roldán, Juan B.
Miranda, Enrique
Campabadal Segura, Francesca
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Memristors
Resisitive switching
ReRAM
Set processes
Reset processes
33 Ciencias Tecnológicas
22 Física
topic Memristors
Resisitive switching
ReRAM
Set processes
Reset processes
33 Ciencias Tecnológicas
22 Física
description Producción Científica
publishDate 2022
dc.date.none.fl_str_mv 2022
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1016/j.sse.2022.108385
https://uvadoc.uva.es/handle/10324/58643
url https://doi.org/10.1016/j.sse.2022.108385
https://uvadoc.uva.es/handle/10324/58643
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://www.sciencedirect.com/science/article/pii/S0038110122001575
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869410284299354112
score 15.228081

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