Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant

In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during el...

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Autores: González, Mireia Bargalló, Rafí, Joan Marc, Beldarrain, Oihane, Zabala, Miguel, Campabadal, Francesca
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2013
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/378620
Acesso em linha:http://hdl.handle.net/10261/378620
https://api.elsevier.com/content/abstract/scopus_id/84872721973
Access Level:acceso abierto
Palavra-chave:Aluminum
Atomic layer deposition
Charge trapping
Deposits
Oxidants
Electrical stress
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
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spelling Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidantGonzález, Mireia BargallóRafí, Joan MarcBeldarrain, OihaneZabala, MiguelCampabadal, FrancescaAluminumAtomic layer depositionCharge trappingDepositsOxidantsElectrical stresshttp://metadata.un.org/sdg/9Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovationIn this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during electrical stress. For this purpose, current-voltage, capacitance-voltage, and conductance-voltage characteristics of Al/Al2O3/p-Si capacitors are analyzed before and after constant voltage stress and several phenomena such as the generation of neutral traps in the bulk dielectric, slow states, interface states, and charge trapping related degradation during the electrical stress are investigated. Finally, the impact of the oxidant source on the Al2O3 layer reliability is discussed. © 2013 American Vacuum Society.Thanks are due to Jordi Llobet for sample preparation for TEM inspection. This work was supported by the Spanish Ministry of Science and Innovation through project TEC2008-06698-C02-01 and by the Consejo Superior de Investigaciones Científicas (CSIC) under Contract “Junta para la Ampliación de Estudios,” JAE-Doc.Peer reviewedAmerican Institute of PhysicsAmerican Vacuum SocietyConsejo Superior de Investigaciones Científicas (España)Ministerio de Ciencia e Innovación (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252013info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/378620https://api.elsevier.com/content/abstract/scopus_id/84872721973reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MICINN//TEC2008-06698-C02-01Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronicshttps://doi.org/10.1116/1.4766182Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3786202026-05-22T06:33:51Z
dc.title.none.fl_str_mv Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
title Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
spellingShingle Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
González, Mireia Bargalló
Aluminum
Atomic layer deposition
Charge trapping
Deposits
Oxidants
Electrical stress
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
title_short Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
title_full Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
title_fullStr Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
title_full_unstemmed Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
title_sort Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
dc.creator.none.fl_str_mv González, Mireia Bargalló
Rafí, Joan Marc
Beldarrain, Oihane
Zabala, Miguel
Campabadal, Francesca
author González, Mireia Bargalló
author_facet González, Mireia Bargalló
Rafí, Joan Marc
Beldarrain, Oihane
Zabala, Miguel
Campabadal, Francesca
author_role author
author2 Rafí, Joan Marc
Beldarrain, Oihane
Zabala, Miguel
Campabadal, Francesca
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas (España)
Ministerio de Ciencia e Innovación (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Aluminum
Atomic layer deposition
Charge trapping
Deposits
Oxidants
Electrical stress
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
topic Aluminum
Atomic layer deposition
Charge trapping
Deposits
Oxidants
Electrical stress
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
description In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during electrical stress. For this purpose, current-voltage, capacitance-voltage, and conductance-voltage characteristics of Al/Al2O3/p-Si capacitors are analyzed before and after constant voltage stress and several phenomena such as the generation of neutral traps in the bulk dielectric, slow states, interface states, and charge trapping related degradation during the electrical stress are investigated. Finally, the impact of the oxidant source on the Al2O3 layer reliability is discussed. © 2013 American Vacuum Society.
publishDate 2013
dc.date.none.fl_str_mv 2013
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/378620
https://api.elsevier.com/content/abstract/scopus_id/84872721973
url http://hdl.handle.net/10261/378620
https://api.elsevier.com/content/abstract/scopus_id/84872721973
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MICINN//TEC2008-06698-C02-01
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
https://doi.org/10.1116/1.4766182
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
American Vacuum Society
publisher.none.fl_str_mv American Institute of Physics
American Vacuum Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.228081

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