Gas sensing properties of WO<inf>3</inf> thin films deposited by rf sputtering
WO3 thin films were deposited by reactive radio frequency (rf) sputtering from a pure tungsten target. The deposition process was conducted with three interruptions and the interruption time was 30, 90 and 300 s. On the basis of these films, sensing layers were prepared and their responses to NO2, a...
| Autores: | , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/345435 |
| Acesso em linha: | http://hdl.handle.net/10261/345435 https://api.elsevier.com/content/abstract/scopus_id/34548612273 |
| Access Level: | acceso abierto |
| Palavra-chave: | Deposition with interruptions | Gas sensing properties | WO thin film 3 |
| Resumo: | WO3 thin films were deposited by reactive radio frequency (rf) sputtering from a pure tungsten target. The deposition process was conducted with three interruptions and the interruption time was 30, 90 and 300 s. On the basis of these films, sensing layers were prepared and their responses to NO2, ammonia and ethanol were investigated. It was found that the sensing layers prepared with an interruption time of more than 90 s showed the best sensing properties. © 2007 Elsevier B.V. All rights reserved. |
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