Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Producción Científica
| Autores: | , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad de Valladolid |
| Repositorio: | UVaDOC. Repositorio Documental de la Universidad de Valladolid |
| OAI Identifier: | oai:uvadoc.uva.es:10324/59092 |
| Acceso en línea: | https://doi.org/10.3390/electronics10222816 https://uvadoc.uva.es/handle/10324/59092 |
| Access Level: | acceso abierto |
| Palabra clave: | Electric resistors Switching circuits Electronic Circuits and Devices Resistive switching ReRAM devices Neuromorphic computing Conduction mechanisms 2202.03 Electricidad |
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devicesGarcía García, HéctorBoo Alvarez, JonathanVinuesa Sanz, GuillermoGonzález Ossorio, ÓscarSahelices Fernández, BenjamínDueñas Carazo, SalvadorCastán Lanaspa, María HelenaBargalló González, MireiaCampabadal Segura, FrancescaElectric resistorsSwitching circuitsElectronic Circuits and DevicesResistive switchingReRAM devicesNeuromorphic computingConduction mechanisms2202.03 ElectricidadProducción CientíficaIn the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (Projects TEC2017-84321-C4-2-R and TEC2017-84321-C4-1-R)MDPI2021info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.3390/electronics10222816https://uvadoc.uva.es/handle/10324/59092reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://www.mdpi.com/2079-9292/10/22/2816info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/4.0/oai:uvadoc.uva.es:10324/590922026-06-13T12:44:47Z |
| dc.title.none.fl_str_mv |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| title |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| spellingShingle |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices García García, Héctor Electric resistors Switching circuits Electronic Circuits and Devices Resistive switching ReRAM devices Neuromorphic computing Conduction mechanisms 2202.03 Electricidad |
| title_short |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| title_full |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| title_fullStr |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| title_full_unstemmed |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| title_sort |
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices |
| dc.creator.none.fl_str_mv |
García García, Héctor Boo Alvarez, Jonathan Vinuesa Sanz, Guillermo González Ossorio, Óscar Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Bargalló González, Mireia Campabadal Segura, Francesca |
| author |
García García, Héctor |
| author_facet |
García García, Héctor Boo Alvarez, Jonathan Vinuesa Sanz, Guillermo González Ossorio, Óscar Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Bargalló González, Mireia Campabadal Segura, Francesca |
| author_role |
author |
| author2 |
Boo Alvarez, Jonathan Vinuesa Sanz, Guillermo González Ossorio, Óscar Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Bargalló González, Mireia Campabadal Segura, Francesca |
| author2_role |
author author author author author author author author |
| dc.subject.none.fl_str_mv |
Electric resistors Switching circuits Electronic Circuits and Devices Resistive switching ReRAM devices Neuromorphic computing Conduction mechanisms 2202.03 Electricidad |
| topic |
Electric resistors Switching circuits Electronic Circuits and Devices Resistive switching ReRAM devices Neuromorphic computing Conduction mechanisms 2202.03 Electricidad |
| description |
Producción Científica |
| publishDate |
2021 |
| dc.date.none.fl_str_mv |
2021 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
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article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://doi.org/10.3390/electronics10222816 https://uvadoc.uva.es/handle/10324/59092 |
| url |
https://doi.org/10.3390/electronics10222816 https://uvadoc.uva.es/handle/10324/59092 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
https://www.mdpi.com/2079-9292/10/22/2816 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/4.0/ |
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openAccess |
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http://creativecommons.org/licenses/by/4.0/ |
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application/pdf |
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MDPI |
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MDPI |
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reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid instname:Universidad de Valladolid |
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Universidad de Valladolid |
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UVaDOC. Repositorio Documental de la Universidad de Valladolid |
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UVaDOC. Repositorio Documental de la Universidad de Valladolid |
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