RTD-CMOS pipelined networks for reduced power consumption

The incorporation of resonant tunneling diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance, producing higher circuit speed, reduced component count, and/or lower power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS)...

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Autores: Núñez Martínez, Juan, Avedillo de Juan, María José, Quintana Toledo, José María
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/76623
Acceso en línea:https://hdl.handle.net/11441/76623
https://doi.org/10.1109/TNANO.2011.2157518
Access Level:acceso abierto
Palabra clave:Resonant tunneling diode
Nano-pipeline
Emerging technologies
Logic circuits
Power efficiency
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spelling RTD-CMOS pipelined networks for reduced power consumptionNúñez Martínez, JuanAvedillo de Juan, María JoséQuintana Toledo, José MaríaResonant tunneling diodeNano-pipelineEmerging technologiesLogic circuitsPower efficiencyThe incorporation of resonant tunneling diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance, producing higher circuit speed, reduced component count, and/or lower power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some studies have concentrated on evaluating the advantages of this incorporation, more work in this direction is required. In this letter, we compare RTD-CMOS and pure CMOS realizations of a logic gate network which can be operated in a gate-level pipeline. Significantly lower average power is obtained for RTD-CMOS implementations.Gobierno de España TEC2007-67245, TEC2010-18937Junta de Andalucía TIC-2961Institute of Electrical and Electronics EngineersElectrónica y ElectromagnetismoGobierno de EspañaJunta de Andalucía2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/76623https://doi.org/10.1109/TNANO.2011.2157518reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésIEEE Transactions on Nanotechnology, 10 (6), 1217-1220.TEC2007-67245TEC2010-18937TIC-2961http://dx.doi.org/10.1109/TNANO.2011.2157518info:eu-repo/semantics/openAccessoai:idus.us.es:11441/766232026-06-17T12:51:07Z
dc.title.none.fl_str_mv RTD-CMOS pipelined networks for reduced power consumption
title RTD-CMOS pipelined networks for reduced power consumption
spellingShingle RTD-CMOS pipelined networks for reduced power consumption
Núñez Martínez, Juan
Resonant tunneling diode
Nano-pipeline
Emerging technologies
Logic circuits
Power efficiency
title_short RTD-CMOS pipelined networks for reduced power consumption
title_full RTD-CMOS pipelined networks for reduced power consumption
title_fullStr RTD-CMOS pipelined networks for reduced power consumption
title_full_unstemmed RTD-CMOS pipelined networks for reduced power consumption
title_sort RTD-CMOS pipelined networks for reduced power consumption
dc.creator.none.fl_str_mv Núñez Martínez, Juan
Avedillo de Juan, María José
Quintana Toledo, José María
author Núñez Martínez, Juan
author_facet Núñez Martínez, Juan
Avedillo de Juan, María José
Quintana Toledo, José María
author_role author
author2 Avedillo de Juan, María José
Quintana Toledo, José María
author2_role author
author
dc.contributor.none.fl_str_mv Electrónica y Electromagnetismo
Gobierno de España
Junta de Andalucía
dc.subject.none.fl_str_mv Resonant tunneling diode
Nano-pipeline
Emerging technologies
Logic circuits
Power efficiency
topic Resonant tunneling diode
Nano-pipeline
Emerging technologies
Logic circuits
Power efficiency
description The incorporation of resonant tunneling diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance, producing higher circuit speed, reduced component count, and/or lower power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some studies have concentrated on evaluating the advantages of this incorporation, more work in this direction is required. In this letter, we compare RTD-CMOS and pure CMOS realizations of a logic gate network which can be operated in a gate-level pipeline. Significantly lower average power is obtained for RTD-CMOS implementations.
publishDate 2011
dc.date.none.fl_str_mv 2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/76623
https://doi.org/10.1109/TNANO.2011.2157518
url https://hdl.handle.net/11441/76623
https://doi.org/10.1109/TNANO.2011.2157518
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv IEEE Transactions on Nanotechnology, 10 (6), 1217-1220.
TEC2007-67245
TEC2010-18937
TIC-2961
http://dx.doi.org/10.1109/TNANO.2011.2157518
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,228081

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