Advancing Logic Circuits With Halide Perovskite Memristors for Next-Generation Digital Systems
[EN] The potential of all¿inorganic halide perovskite¿based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next¿generation digital architectures, is investigated. The rapid expansion of data¿driven applications demands mor...
| Autores: | , , , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2025 |
| País: | España |
| Recursos: | Universitat Politècnica de València (UPV) |
| Repositório: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglês |
| OAI Identifier: | oai:riunet.upv.es:10251/225337 |
| Acesso em linha: | https://riunet.upv.es/handle/10251/225337 |
| Access Level: | Acceso aberto |
| Palavra-chave: | All-inorganic halide perovskite Memristors Edge computing In-memory computing Resistance switching Cs3Bi2I6Br3 Spin coating Verilog-A modeling CMOS integration Logic circuits |
| Resumo: | [EN] The potential of all¿inorganic halide perovskite¿based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next¿generation digital architectures, is investigated. The rapid expansion of data¿driven applications demands more efficient, secure, and scalable memory technologies, prompting this exploration of memristors for their unique resistance¿switching properties. The research aims to address the challenges of data security and processing efficiency by integrating memristors into logic circuits, enabling both memory and logic operations within a single device. The study is structured around the experimental fabrication and characterization of Cs3Bi2I6Br3 perovskite memristors. A simple solution¿processed spin coating method with antisolvent¿assisted crystallization was employed to fabricate the memristor devices. The experimental characterization of memristors, including X¿ray diffraction (XRD) analysis and electrical measurements, confirmed their structural integrity and memristive behavior, with distinct hysteresis loops indicative of nonvolatile memory properties. To analyze the behavior of the memristors in electronic circuits, a Verilog¿A mathematical model was developed, and simulations were conducted using the Cadence Virtuoso Electronic Design Automation (EDA) suite. The Verilog¿A model demonstrates strong agreement with measured results and validates the device's hysteresis behavior. Key findings demonstrate that metal halide perovskite (MHP) memristors exhibit excellent switching characteristics, repeatability, and integration potential with complementary metal¿oxide¿semiconductor (CMOS) technology. These properties make them suitable for implementing various logic gates, such as IMPLY, AND, and OR gates, as well as more complex digital circuits like multiplexers and full adders. The results highlight the feasibility of using these memristors for in¿memory computing, where both data storage and processing occur within the memory cells, significantly enhancing computing efficiency and security. The study concludes that MHP¿based memristors offer a promising path toward more compact, energy¿efficient, and secure computing architectures. |
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