Donor impurity-related optical absorption spectra in GaAs-Ga1–xAlxAs quantum wells : hydrostatic pressure and Γ –X conduction band mixing effects
ABSTARCT: Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–xAlxAs quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acc...
| Autores: | , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | Colombia |
| Recursos: | Universidad de Antioquia |
| Repositorio: | Repositorio UdeA |
| Idioma: | inglés |
| OAI Identifier: | oai:bibliotecadigital.udea.edu.co:10495/4834 |
| Acesso em linha: | http://hdl.handle.net/10495/4834 |
| Access Level: | acceso abierto |
| Palavra-chave: | Hidrostática Óptica Física |
| Resumo: | ABSTARCT: Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–xAlxAs quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
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