Influence of heat treatment on LiNbO3 thin films prepared on Si(111) by the polymeric precursor method
The effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low t...
| Autores: | , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1999 |
| País: | Brasil |
| Recursos: | Universidade Estadual Paulista (UNESP) |
| Repositorio: | Repositório Institucional da UNESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/65803 |
| Acesso em linha: | http://dx.doi.org/10.1557/JMR.1999.0418 http://hdl.handle.net/11449/65803 |
| Access Level: | acceso abierto |
| Palavra-chave: | Crystal microstructure Crystal orientation Crystallization Ferroelectric materials Film preparation Heat treatment Lithium niobate Piezoelectric materials Silicon wafers Surface structure Thermal effects Thin films Polymeric precursor method Dielectric films |
| Resumo: | The effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low temperature (420 °C) and led to films with no preferential orientation. High-temperature treatments promoted formation of the LiNb3O8 phase. Scanning electron microscopy, coupled with energy dispersive spectroscopy analyses, showed that the treatment temperature also affected the film microstructure. The surface texture - homogeneous, smooth, and pore-free at low temperature - turned into an `islandlike' microstructure for high-temperature treatments. |
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