Processing of porous GaAs at low frequency sparking

Article

Detalles Bibliográficos
Autor: Rojas López, Marlon
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2012
País:México
Institución:Instituto Politécnico Nacional
Repositorio:Repositorio Digital del IPN
OAI Identifier:oai:www.repositoriodigital.ipn.mx:123456789/9103
Acceso en línea:http://www.repositoriodigital.ipn.mx/handle/123456789/9103
Access Level:acceso abierto
Palabra clave:GaAs
id MX_fbd82303157ea689120db443196f8dfd
oai_identifier_str oai:www.repositoriodigital.ipn.mx:123456789/9103
network_acronym_str MX
network_name_str México
repository_id_str
spelling Processing of porous GaAs at low frequency sparkingRojas López, MarlonGaAsArticleWe report on the preparation of photoluminescent porous GaAs by the application of high voltage spark discharges at low repetition rates ~20 Hz! in air and in argon atmospheres. The spark-processed porous ~spp! samples were characterized by the observation of their visible photoluminescence ~PL! when illuminated with UV monochromatic radiation. In contrast to previous work on spp-GaAs at high sparking frequencies we find that the PL of samples prepared at low sparking frequency is highly reproducible from sample to sample. Important differences are observed in the initial PL spectra of the spp-GaAs according to the atmosphere of preparation under similar conditions. After prolonged air exposure both the spp-GaAs prepared in air and in argon show two similar broad peaks at energy positions 2.5 and 3.1 eV. Raman results indicate that the PL might not be associated to any size dependent mechanism. We present evidence that oxygen compounds formed by the exposure to air of the samples play a role in the PL excited in the spp-GaAs. This is reinforced by x-ray photoelectronic spectroscopy measurements that indicate that the spp-GaAs is covered by an oxidized film. © 1999 American Vacuum Society.Instituto Politécnico Nacional CIBA TlaxcalaMedico-BiológicasPDF2012-12-18T02:51:02Z2012-12-18T02:51:02Z2012-12-17info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://www.repositoriodigital.ipn.mx/handle/123456789/9103reponame:Repositorio Digital del IPNinstname:Instituto Politécnico Nacionalinstacron:IPNeninfo:eu-repo/semantics/openAccessoai:www.repositoriodigital.ipn.mx:123456789/91032026-02-18T16:40:18Z
dc.title.none.fl_str_mv Processing of porous GaAs at low frequency sparking
title Processing of porous GaAs at low frequency sparking
spellingShingle Processing of porous GaAs at low frequency sparking
Rojas López, Marlon
GaAs
title_short Processing of porous GaAs at low frequency sparking
title_full Processing of porous GaAs at low frequency sparking
title_fullStr Processing of porous GaAs at low frequency sparking
title_full_unstemmed Processing of porous GaAs at low frequency sparking
title_sort Processing of porous GaAs at low frequency sparking
dc.creator.none.fl_str_mv Rojas López, Marlon
author Rojas López, Marlon
author_facet Rojas López, Marlon
author_role author
dc.subject.none.fl_str_mv GaAs
topic GaAs
description Article
publishDate 2012
dc.date.none.fl_str_mv 2012-12-18T02:51:02Z
2012-12-18T02:51:02Z
2012-12-17
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://www.repositoriodigital.ipn.mx/handle/123456789/9103
url http://www.repositoriodigital.ipn.mx/handle/123456789/9103
dc.language.none.fl_str_mv en
language_invalid_str_mv en
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Repositorio Digital del IPN
instname:Instituto Politécnico Nacional
instacron:IPN
instname_str Instituto Politécnico Nacional
instacron_str IPN
institution IPN
reponame_str Repositorio Digital del IPN
collection Repositorio Digital del IPN
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1858177788840771584
score 15,198674