Processing of porous GaAs at low frequency sparking
Article
| Autor: | |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Repositorio Digital del IPN |
| OAI Identifier: | oai:www.repositoriodigital.ipn.mx:123456789/9103 |
| Acceso en línea: | http://www.repositoriodigital.ipn.mx/handle/123456789/9103 |
| Access Level: | acceso abierto |
| Palabra clave: | GaAs |
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Processing of porous GaAs at low frequency sparkingRojas López, MarlonGaAsArticleWe report on the preparation of photoluminescent porous GaAs by the application of high voltage spark discharges at low repetition rates ~20 Hz! in air and in argon atmospheres. The spark-processed porous ~spp! samples were characterized by the observation of their visible photoluminescence ~PL! when illuminated with UV monochromatic radiation. In contrast to previous work on spp-GaAs at high sparking frequencies we find that the PL of samples prepared at low sparking frequency is highly reproducible from sample to sample. Important differences are observed in the initial PL spectra of the spp-GaAs according to the atmosphere of preparation under similar conditions. After prolonged air exposure both the spp-GaAs prepared in air and in argon show two similar broad peaks at energy positions 2.5 and 3.1 eV. Raman results indicate that the PL might not be associated to any size dependent mechanism. We present evidence that oxygen compounds formed by the exposure to air of the samples play a role in the PL excited in the spp-GaAs. This is reinforced by x-ray photoelectronic spectroscopy measurements that indicate that the spp-GaAs is covered by an oxidized film. © 1999 American Vacuum Society.Instituto Politécnico Nacional CIBA TlaxcalaMedico-BiológicasPDF2012-12-18T02:51:02Z2012-12-18T02:51:02Z2012-12-17info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://www.repositoriodigital.ipn.mx/handle/123456789/9103reponame:Repositorio Digital del IPNinstname:Instituto Politécnico Nacionalinstacron:IPNeninfo:eu-repo/semantics/openAccessoai:www.repositoriodigital.ipn.mx:123456789/91032026-02-18T16:40:18Z |
| dc.title.none.fl_str_mv |
Processing of porous GaAs at low frequency sparking |
| title |
Processing of porous GaAs at low frequency sparking |
| spellingShingle |
Processing of porous GaAs at low frequency sparking Rojas López, Marlon GaAs |
| title_short |
Processing of porous GaAs at low frequency sparking |
| title_full |
Processing of porous GaAs at low frequency sparking |
| title_fullStr |
Processing of porous GaAs at low frequency sparking |
| title_full_unstemmed |
Processing of porous GaAs at low frequency sparking |
| title_sort |
Processing of porous GaAs at low frequency sparking |
| dc.creator.none.fl_str_mv |
Rojas López, Marlon |
| author |
Rojas López, Marlon |
| author_facet |
Rojas López, Marlon |
| author_role |
author |
| dc.subject.none.fl_str_mv |
GaAs |
| topic |
GaAs |
| description |
Article |
| publishDate |
2012 |
| dc.date.none.fl_str_mv |
2012-12-18T02:51:02Z 2012-12-18T02:51:02Z 2012-12-17 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/publishedVersion info:eu-repo/semantics/article |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://www.repositoriodigital.ipn.mx/handle/123456789/9103 |
| url |
http://www.repositoriodigital.ipn.mx/handle/123456789/9103 |
| dc.language.none.fl_str_mv |
en |
| language_invalid_str_mv |
en |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.source.none.fl_str_mv |
reponame:Repositorio Digital del IPN instname:Instituto Politécnico Nacional instacron:IPN |
| instname_str |
Instituto Politécnico Nacional |
| instacron_str |
IPN |
| institution |
IPN |
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Repositorio Digital del IPN |
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Repositorio Digital del IPN |
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1858177788840771584 |
| score |
15,198674 |