Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance
Optical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum conta...
| Autores: | , , , , , , , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | México |
| Institución: | Universidad de Guanajuato |
| Repositorio: | Redalyc-UG |
| OAI Identifier: | oai:redalyc.org:41615204 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=41615204 |
| Access Level: | acceso abierto |
| Palabra clave: | Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance |
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Shallow levels characterization in epitaxial GaAs by acousto-optic reflectanceJ. González-BarbosaG. Cerda-VillicañaIgor V. OstrovskiiJ. Estudillo-AyalaM. Torres-CisnerosGennadiy N. BurlakSvetlana V. KoshevayaR. Guzmán-CabreraL. A. Aguilera-CortésE. Alvarado-MéndezJ. A. Andrade-LucioR. Rojas-LagunaJ. G. Aviña-CervantesR. Castro-SánchezO. G. Ibarra-ManzanoMultidisciplinarias (Ciencias Sociales)SemiconductorsShallow levelsOptical refl ectanceOptical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum contains some bands that represent the energetic levels of the shallowcenters in a sample. A physical basis of this technique is related to a perturbation of localstates by UW. Here, a method is developed for characterization of local states at the surfacesand interfaces in crystals and low-dimensional epitaxial structures based on microelectronicsmaterials. A theoretical model is presented to explain AODR spectra. Also, experimentsusing epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimentalresults show that acousto-optic refl ectance is an effective tool for characterization of shallowtrapping centers in epitaxial semiconductor structures.Universidad de Guanajuato2005info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdf0188-6266https://www.redalyc.org/articulo.oa?id=41615204Acta Universitaria (México) Num.2 Vol.15reponame:Redalyc-UGinstname:Universidad de Guanajuatoinstacron:UGenhttp://www.redalyc.org/revista.oa?id=416Acta Universitariainfo:eu-repo/semantics/openAccessoai:redalyc.org:416152042024-08-23T15:29:52Z |
| dc.title.none.fl_str_mv |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| title |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| spellingShingle |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance J. González-Barbosa Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance |
| title_short |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| title_full |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| title_fullStr |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| title_full_unstemmed |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| title_sort |
Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| dc.creator.none.fl_str_mv |
J. González-Barbosa G. Cerda-Villicaña Igor V. Ostrovskii J. Estudillo-Ayala M. Torres-Cisneros Gennadiy N. Burlak Svetlana V. Koshevaya R. Guzmán-Cabrera L. A. Aguilera-Cortés E. Alvarado-Méndez J. A. Andrade-Lucio R. Rojas-Laguna J. G. Aviña-Cervantes R. Castro-Sánchez O. G. Ibarra-Manzano |
| author |
J. González-Barbosa |
| author_facet |
J. González-Barbosa G. Cerda-Villicaña Igor V. Ostrovskii J. Estudillo-Ayala M. Torres-Cisneros Gennadiy N. Burlak Svetlana V. Koshevaya R. Guzmán-Cabrera L. A. Aguilera-Cortés E. Alvarado-Méndez J. A. Andrade-Lucio R. Rojas-Laguna J. G. Aviña-Cervantes R. Castro-Sánchez O. G. Ibarra-Manzano |
| author_role |
author |
| author2 |
G. Cerda-Villicaña Igor V. Ostrovskii J. Estudillo-Ayala M. Torres-Cisneros Gennadiy N. Burlak Svetlana V. Koshevaya R. Guzmán-Cabrera L. A. Aguilera-Cortés E. Alvarado-Méndez J. A. Andrade-Lucio R. Rojas-Laguna J. G. Aviña-Cervantes R. Castro-Sánchez O. G. Ibarra-Manzano |
| author2_role |
author author author author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance |
| topic |
Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance |
| description |
Optical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum contains some bands that represent the energetic levels of the shallowcenters in a sample. A physical basis of this technique is related to a perturbation of localstates by UW. Here, a method is developed for characterization of local states at the surfacesand interfaces in crystals and low-dimensional epitaxial structures based on microelectronicsmaterials. A theoretical model is presented to explain AODR spectra. Also, experimentsusing epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimentalresults show that acousto-optic refl ectance is an effective tool for characterization of shallowtrapping centers in epitaxial semiconductor structures. |
| publishDate |
2005 |
| dc.date.none.fl_str_mv |
2005 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/publishedVersion info:eu-repo/semantics/article |
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article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
0188-6266 https://www.redalyc.org/articulo.oa?id=41615204 |
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0188-6266 |
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https://www.redalyc.org/articulo.oa?id=41615204 |
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en |
| language_invalid_str_mv |
en |
| dc.relation.none.fl_str_mv |
http://www.redalyc.org/revista.oa?id=416 |
| dc.rights.none.fl_str_mv |
Acta Universitaria info:eu-repo/semantics/openAccess |
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Acta Universitaria |
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openAccess |
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application/pdf |
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Universidad de Guanajuato |
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Universidad de Guanajuato |
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Acta Universitaria (México) Num.2 Vol.15 reponame:Redalyc-UG instname:Universidad de Guanajuato instacron:UG |
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Universidad de Guanajuato |
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UG |
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UG |
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Redalyc-UG |
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Redalyc-UG |
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