Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis
The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450 ± C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M...
| Autores: | , , , , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2015 |
| País: | México |
| Recursos: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositório: | Redalyc-INAOE |
| OAI Identifier: | oai:redalyc.org:57036862009 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=57036862009 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Física, Astronomía y Matemáticas ZnO electrical properties thin film transistors |
| Resumo: | The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450 ± C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO 2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250 ± C showed field-effect mobilities around of 0.05 cm 2 /Vs and threshold voltages of 8 V. |
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