Antimony chalcogenide thin films: chemical bath deposition and formation of new materials by post deposition thermal processing
Results of the deposition of thin films of sulfide and selenide of antimony from chemical baths containing SbCl3 and source of sulfide or selenide ions in presence of ligands forming soluble complexes with antimony will be presented. As prepared, the films are of poor crystallinity and show larger b...
| Authors: | , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 1999 |
| Country: | México |
| Institution: | Universidad Nacional Autónoma de México |
| Repository: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:94200926 |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94200926 |
| Access Level: | Open access |
| Keyword: | Física, Astronomía y Matemáticas Thin films new materials chemical bath deposition |
| Summary: | Results of the deposition of thin films of sulfide and selenide of antimony from chemical baths containing SbCl3 and source of sulfide or selenide ions in presence of ligands forming soluble complexes with antimony will be presented. As prepared, the films are of poor crystallinity and show larger band gaps (eg., 2.2 eV in the case ofSb2S3) than those reported for the material in bulk, due to quantum confinement arising from the very small crystallites. However, the films after annealing in nitrogen around 350 ºC show well defined peaks in their x rays diffraction patterns. The paper will also deal with the formation of new thin film materials through annealing multilayer thin films involving the antimony chalcogenide films. This possibility opens up the fabrication of thin film semiconductors covering a wide range of structural, electrical and optical properties for large area photonic applications |
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