Monitoring of the MBE growth processes of CdTe on InSb by laser light scattering
We have studied by Laser Light Scattering (LLS) the oxides surface desorption of InSb substrates, and the subsequentgrowth of CdTe layers by molecular beam epitaxy (MBE). LLS measurements allowed us to determine the criticaltemperature before surface degradation of InSb, which is not evidently notic...
| Autores: | , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1999 |
| País: | México |
| Recursos: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:94200905 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94200905 |
| Access Level: | acceso abierto |
| Palavra-chave: | Física, Astronomía y Matemáticas MBE SEM AFM CdTe InSb |
| Resumo: | We have studied by Laser Light Scattering (LLS) the oxides surface desorption of InSb substrates, and the subsequentgrowth of CdTe layers by molecular beam epitaxy (MBE). LLS measurements allowed us to determine the criticaltemperature before surface degradation of InSb, which is not evidently noticed by reflection high energy electrondiffraction (RHEED). Surface defects appeared on substrates where this temperature was exceeded, as observed byscanning electron microscopy (SEM) and Atomic Force Microscopy (AFM). During the MBE of CdTe on InSb,two features were noticed in LLS measurements. First, a decrease in intensity was observed that can be associated to achange in surface roughness at the initial stages of growth. The second feature is an oscillatory behavior, which can berelated to interference. A geometrical model of interference in thin films was used to calculate the layer thickness in realtime |
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