Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation

Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of...

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Detalhes bibliográficos
Autores: Velazco, Raoul, Clemente Barreira, Juan Antonio, Hubert, Guillaume, Mansour, Wassim, Palomar Trives, Carlos, Franco Peláez, Francisco Javier, Baylac, Maud, Rey, Solenne, Rosetto, Olivier, Villa, Francesca
Formato: artículo
Fecha de publicación:2014
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/33823
Acesso em linha:https://hdl.handle.net/20.500.14352/33823
Access Level:acceso abierto
Palavra-chave:537.8
CMOS integrated circuits
DRAM chips
SRAM chips
Capacitors
Contamination
Neutron effects
Radiation hardening (electronics)
CMOS SRAM
COTS soft-error free SRAM
DRAM capacitors
MUSCA SEP3 simulations
SRAM cells
Cross-section values
Electron volt energy 15 MeV
High-energy neutrons
Memory cell design
Neutron radiation
Radiation tests
Radioactive contamination
Error analysis
Neutrons
Reliability
Single event upsets
COTS
LPSRAM
MUSCA SEP3
SRAM
Neutron tests
Radiation hardness
Soft error
Electrónica (Física)
Circuitos integrados
2203.07 Circuitos Integrados
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oai_identifier_str oai:docta.ucm.es:20.500.14352/33823
network_acronym_str ES
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repository_id_str
spelling Evidence of the robustness of a COTS soft-error free SRAM to neutron radiationVelazco, RaoulClemente Barreira, Juan AntonioHubert, GuillaumeMansour, WassimPalomar Trives, CarlosFranco Peláez, Francisco JavierBaylac, MaudRey, SolenneRosetto, OlivierVilla, Francesca537.8CMOS integrated circuitsDRAM chipsSRAM chipsCapacitorsContaminationNeutron effectsRadiation hardening (electronics)CMOS SRAMCOTS soft-error free SRAMDRAM capacitorsMUSCA SEP3 simulationsSRAM cellsCross-section valuesElectron volt energy 15 MeVHigh-energy neutronsMemory cell designNeutron radiationRadiation testsRadioactive contaminationError analysisNeutronsReliabilitySingle event upsetsCOTSLPSRAMMUSCA SEP3SRAMNeutron testsRadiation hardnessSoft errorElectrónica (Física)Circuitos integrados2203.07 Circuitos IntegradosRadiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics.IEEE-Inst Electrical Electronics Engineers IncUniversidad Complutense de Madrid20142014-12-0120142014-12-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/33823reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/338232026-06-02T12:44:21Z
dc.title.none.fl_str_mv Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
title Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
spellingShingle Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
Velazco, Raoul
537.8
CMOS integrated circuits
DRAM chips
SRAM chips
Capacitors
Contamination
Neutron effects
Radiation hardening (electronics)
CMOS SRAM
COTS soft-error free SRAM
DRAM capacitors
MUSCA SEP3 simulations
SRAM cells
Cross-section values
Electron volt energy 15 MeV
High-energy neutrons
Memory cell design
Neutron radiation
Radiation tests
Radioactive contamination
Error analysis
Neutrons
Reliability
Single event upsets
COTS
LPSRAM
MUSCA SEP3
SRAM
Neutron tests
Radiation hardness
Soft error
Electrónica (Física)
Circuitos integrados
2203.07 Circuitos Integrados
title_short Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
title_full Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
title_fullStr Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
title_full_unstemmed Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
title_sort Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
dc.creator.none.fl_str_mv Velazco, Raoul
Clemente Barreira, Juan Antonio
Hubert, Guillaume
Mansour, Wassim
Palomar Trives, Carlos
Franco Peláez, Francisco Javier
Baylac, Maud
Rey, Solenne
Rosetto, Olivier
Villa, Francesca
author Velazco, Raoul
author_facet Velazco, Raoul
Clemente Barreira, Juan Antonio
Hubert, Guillaume
Mansour, Wassim
Palomar Trives, Carlos
Franco Peláez, Francisco Javier
Baylac, Maud
Rey, Solenne
Rosetto, Olivier
Villa, Francesca
author_role author
author2 Clemente Barreira, Juan Antonio
Hubert, Guillaume
Mansour, Wassim
Palomar Trives, Carlos
Franco Peláez, Francisco Javier
Baylac, Maud
Rey, Solenne
Rosetto, Olivier
Villa, Francesca
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537.8
CMOS integrated circuits
DRAM chips
SRAM chips
Capacitors
Contamination
Neutron effects
Radiation hardening (electronics)
CMOS SRAM
COTS soft-error free SRAM
DRAM capacitors
MUSCA SEP3 simulations
SRAM cells
Cross-section values
Electron volt energy 15 MeV
High-energy neutrons
Memory cell design
Neutron radiation
Radiation tests
Radioactive contamination
Error analysis
Neutrons
Reliability
Single event upsets
COTS
LPSRAM
MUSCA SEP3
SRAM
Neutron tests
Radiation hardness
Soft error
Electrónica (Física)
Circuitos integrados
2203.07 Circuitos Integrados
topic 537.8
CMOS integrated circuits
DRAM chips
SRAM chips
Capacitors
Contamination
Neutron effects
Radiation hardening (electronics)
CMOS SRAM
COTS soft-error free SRAM
DRAM capacitors
MUSCA SEP3 simulations
SRAM cells
Cross-section values
Electron volt energy 15 MeV
High-energy neutrons
Memory cell design
Neutron radiation
Radiation tests
Radioactive contamination
Error analysis
Neutrons
Reliability
Single event upsets
COTS
LPSRAM
MUSCA SEP3
SRAM
Neutron tests
Radiation hardness
Soft error
Electrónica (Física)
Circuitos integrados
2203.07 Circuitos Integrados
description Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics.
publishDate 2014
dc.date.none.fl_str_mv 2014
2014-12-01
2014
2014-12-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/33823
url https://hdl.handle.net/20.500.14352/33823
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE-Inst Electrical Electronics Engineers Inc
publisher.none.fl_str_mv IEEE-Inst Electrical Electronics Engineers Inc
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425135529754624
score 15,198674

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