Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

Producción Científica

Detalles Bibliográficos
Autores: Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, García García, Héctor, Ossorio, Oscar G., Dominguez, Luis A., Miranda, Enrique
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2017
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/65984
Acceso en línea:https://doi.org/10.1109/LED.2017.2723054
https://uvadoc.uva.es/handle/10324/65984
Access Level:acceso abierto
Palabra clave:Hafnium oxide
meminductor
MIM capacitor
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spelling Experimental Observation of Negative Susceptance in HfO2-Based RRAM DevicesDueñas Carazo, SalvadorCastán Lanaspa, María HelenaGarcía García, HéctorOssorio, Oscar G.Dominguez, Luis A.Miranda, EnriqueHafnium oxidememinductorMIM capacitorProducción CientíficaNegative susceptance is experimentally measured in the low resistance state of TiN/Ti/HfO 2 /W resistive RAM memories. A meminductive-like behavior appears along with the memristive effects. A detailed study of small-signal parameters measured at 0 V after applying positive and negative voltage pulses is presented. A simple model for the conductive filaments consisting in a resistance in series with an inductance is used. In the equivalent circuit, both elements are in parallel with the geometrical capacitance of the structure. Both resistance and inductance show two clearly differentiate states. Positive voltages switch the device to the ON state, in which the resistance value is low and the inductance value is high. By applying appropriate negative voltages, the device switches to the OFF state, in which resistance value is high and inductance becomes negligible. The negative susceptance could be related to lags between current and electric field due to transport mechanisms occurring in the ON state.Institute of Electrical and Electronics Engineers2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1109/LED.2017.2723054https://uvadoc.uva.es/handle/10324/65984reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidEspañolhttps://ieeexplore.ieee.org/document/7967814info:eu-repo/semantics/openAccessoai:uvadoc.uva.es:10324/659842026-06-13T12:44:47Z
dc.title.none.fl_str_mv Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
title Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
spellingShingle Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
Dueñas Carazo, Salvador
Hafnium oxide
meminductor
MIM capacitor
title_short Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
title_full Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
title_fullStr Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
title_full_unstemmed Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
title_sort Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices
dc.creator.none.fl_str_mv Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
García García, Héctor
Ossorio, Oscar G.
Dominguez, Luis A.
Miranda, Enrique
author Dueñas Carazo, Salvador
author_facet Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
García García, Héctor
Ossorio, Oscar G.
Dominguez, Luis A.
Miranda, Enrique
author_role author
author2 Castán Lanaspa, María Helena
García García, Héctor
Ossorio, Oscar G.
Dominguez, Luis A.
Miranda, Enrique
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Hafnium oxide
meminductor
MIM capacitor
topic Hafnium oxide
meminductor
MIM capacitor
description Producción Científica
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1109/LED.2017.2723054
https://uvadoc.uva.es/handle/10324/65984
url https://doi.org/10.1109/LED.2017.2723054
https://uvadoc.uva.es/handle/10324/65984
dc.language.none.fl_str_mv Español
language_invalid_str_mv Español
dc.relation.none.fl_str_mv https://ieeexplore.ieee.org/document/7967814
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,228081

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