Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors

The low- and high-resistance states in Ti/HfO-based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model f...

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Autores: Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866, Campabadal, Francesca|||0000-0001-7758-4567, González, M. B., Miranda, E.|||0000-0003-0470-5318
Formato: artículo
Fecha de publicación:2026
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:dnet:uabarcelona_::90a55021f59f190532eaac75fa795ea2
Acesso em linha:https://ddd.uab.cat/record/328153
https://dx.doi.org/urn:doi:10.1016/j.sse.2026.109352
Access Level:acceso abierto
Palavra-chave:HfO2
Memristors
Resistive switching
Dynamic memdiode model
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spelling Characterization and simulation of the resistance window variability in Ti/HfO2-based memristorseffect of the Ti layer thicknessSaludes Tapia, Maria Mercedes|||0000-0002-7091-4866Campabadal, Francesca|||0000-0001-7758-4567González, M. B.Miranda, E.|||0000-0003-0470-5318HfO2MemristorsResistive switchingDynamic memdiode modelThe low- and high-resistance states in Ti/HfO-based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model for resistive switching devices. It was found that devices with a large thickness ratio t/t ≥ 0.5 exhibit superior performance in terms of switching stability, variability, and magnitude of the resistance window compared with those with a lower ratio. These observations shed light on the role played by the Ti capping layer in the switching performance of practical memristors, a crucial issue for the potential application of these devices in fields such as information storage and neuromorphic computing. 22026-01-0120262026-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/328153https://dx.doi.org/urn:doi:10.1016/j.sse.2026.109352reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2022-139586NB-C41Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2022-139586NB-C42Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 CNS2023-143898open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:dnet:uabarcelona_::90a55021f59f190532eaac75fa795ea22026-06-06T12:50:31Z
dc.title.none.fl_str_mv Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
effect of the Ti layer thickness
title Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
spellingShingle Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
HfO2
Memristors
Resistive switching
Dynamic memdiode model
title_short Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
title_full Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
title_fullStr Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
title_full_unstemmed Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
title_sort Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
dc.creator.none.fl_str_mv Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
Campabadal, Francesca|||0000-0001-7758-4567
González, M. B.
Miranda, E.|||0000-0003-0470-5318
author Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
author_facet Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
Campabadal, Francesca|||0000-0001-7758-4567
González, M. B.
Miranda, E.|||0000-0003-0470-5318
author_role author
author2 Campabadal, Francesca|||0000-0001-7758-4567
González, M. B.
Miranda, E.|||0000-0003-0470-5318
author2_role author
author
author
dc.subject.none.fl_str_mv HfO2
Memristors
Resistive switching
Dynamic memdiode model
topic HfO2
Memristors
Resistive switching
Dynamic memdiode model
description The low- and high-resistance states in Ti/HfO-based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model for resistive switching devices. It was found that devices with a large thickness ratio t/t ≥ 0.5 exhibit superior performance in terms of switching stability, variability, and magnitude of the resistance window compared with those with a lower ratio. These observations shed light on the role played by the Ti capping layer in the switching performance of practical memristors, a crucial issue for the potential application of these devices in fields such as information storage and neuromorphic computing.
publishDate 2026
dc.date.none.fl_str_mv 2
2026-01-01
2026
2026-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/328153
https://dx.doi.org/urn:doi:10.1016/j.sse.2026.109352
url https://ddd.uab.cat/record/328153
https://dx.doi.org/urn:doi:10.1016/j.sse.2026.109352
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2022-139586NB-C41
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2022-139586NB-C42
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 CNS2023-143898
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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