Charge photo-carrier transport from silicon nanocrystals embedded in SiO_2-based multilayer structures
Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO_2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction pr...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/42745 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/42745 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Pulsed-laser deposition Solar-cell applications Si nanocrystals Quantum dots Photoluminescence Nanostructures Temperature Gap Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO_2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO_2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density J_(ph) of 1-2mA cm^(-2) is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells. |
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