Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals

Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and ele...

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Detalhes bibliográficos
Autores: Cremades Rodríguez, Ana Isabel, Piqueras De Noriega, Francisco Javier, Remón, A., García, J. A., Santos, M. T., Dieguez, E.
Formato: artículo
Fecha de publicación:1998
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58845
Acesso em linha:https://hdl.handle.net/20.500.14352/58845
Access Level:acceso abierto
Palavra-chave:538.9
Bi_4Ge_3O_12
Cathodoluminescence
Photoluminescence
Interface
Growth
Física de materiales
id ES_d37343ce91d12e99d0ac32d62ce8d5a5
oai_identifier_str oai:docta.ucm.es:20.500.14352/58845
network_acronym_str ES
network_name_str España
repository_id_str
spelling Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystalsCremades Rodríguez, Ana IsabelPiqueras De Noriega, Francisco JavierRemón, A.García, J. A.Santos, M. T.Dieguez, E.538.9Bi_4Ge_3O_12CathodoluminescencePhotoluminescenceInterfaceGrowthFísica de materialesChanges on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.American Institute of PhysicsUniversidad Complutense de Madrid19981998-06-1519981998-06-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58845reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/588452026-06-02T12:44:21Z
dc.title.none.fl_str_mv Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
title Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
spellingShingle Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
Cremades Rodríguez, Ana Isabel
538.9
Bi_4Ge_3O_12
Cathodoluminescence
Photoluminescence
Interface
Growth
Física de materiales
title_short Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
title_full Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
title_fullStr Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
title_full_unstemmed Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
title_sort Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
dc.creator.none.fl_str_mv Cremades Rodríguez, Ana Isabel
Piqueras De Noriega, Francisco Javier
Remón, A.
García, J. A.
Santos, M. T.
Dieguez, E.
author Cremades Rodríguez, Ana Isabel
author_facet Cremades Rodríguez, Ana Isabel
Piqueras De Noriega, Francisco Javier
Remón, A.
García, J. A.
Santos, M. T.
Dieguez, E.
author_role author
author2 Piqueras De Noriega, Francisco Javier
Remón, A.
García, J. A.
Santos, M. T.
Dieguez, E.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Bi_4Ge_3O_12
Cathodoluminescence
Photoluminescence
Interface
Growth
Física de materiales
topic 538.9
Bi_4Ge_3O_12
Cathodoluminescence
Photoluminescence
Interface
Growth
Física de materiales
description Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-06-15
1998
1998-06-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58845
url https://hdl.handle.net/20.500.14352/58845
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420460621430784
score 15,228081

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