Preferential orientation of ferroelectric calcium modified lead titanate thin films grown on various substrates
[EN] Among all the factors that determine the development of preferential orientation or texture in polycrystalline thin films, the most important is the nature of the substrate. A preferential orientation of the crystallites with the polar axis perpendicular to the film surface results in an import...
| Authors: | , , , |
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| Format: | article |
| Publication Date: | 2002 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/4703 |
| Online Access: | http://hdl.handle.net/10261/4703 |
| Access Level: | Open access |
| Keyword: | Quantitative texture Preferential orientation Thin films Ferroelectrics Textura cuantitativa Orientación preferente Láminas delgadas Ferroeléctricos |
| Summary: | [EN] Among all the factors that determine the development of preferential orientation or texture in polycrystalline thin films, the most important is the nature of the substrate. A preferential orientation of the crystallites with the polar axis perpendicular to the film surface results in an important improvement of the ferroelectric behaviour. In the search for the substrate that produces highly oriented ferroelectric thin films, this work analyses by quantitative texture analysis calcium modified lead titanate thin films deposited on platinised Si, MgO and SrTiO3 substrates. Amixed preferential orientation along <100> and <001> is obtained. From the results of this study we discuss the factors that contribute to the different final textures. First, we analyse the different texture strength of the Pt layer observed in the three substrates, and the growth of the ferroelectric film on them, whose orientation seems to develop independently of the Pt in this case. And secondly, we study the effect of the stress developed during the crystallisation process, caused by the difference in thermal expansion coefficient between each of the substrates and the film, especially on the domain structure formation at the paraelectric cubic- ferroelectric tetragonal phase transition. |
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