Cathodoluminescence characterization of Ge-doped CdTe crystals

Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Depe...

Descripción completa

Detalles Bibliográficos
Autores: Pal, U, Fernández Sánchez, Paloma, Piqueras De Noriega, Francisco Javier, Sochinskii, N. V., Dieguez, E.
Tipo de recurso: artículo
Fecha de publicación:1995
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59253
Acceso en línea:https://hdl.handle.net/20.500.14352/59253
Access Level:acceso abierto
Palabra clave:538.9
Cadmium Telluride
Photoluminescence
Temperature
Defects
Física de materiales
id ES_b4262bf2dc2248e8db3360bde5255160
oai_identifier_str oai:docta.ucm.es:20.500.14352/59253
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence characterization of Ge-doped CdTe crystalsPal, UFernández Sánchez, PalomaPiqueras De Noriega, Francisco JavierSochinskii, N. V.Dieguez, E.538.9Cadmium TelluridePhotoluminescenceTemperatureDefectsFísica de materialesCathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.Amer Inst PhysicsUniversidad Complutense de Madrid19951995-08-0119951995-08-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59253reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592532026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence characterization of Ge-doped CdTe crystals
title Cathodoluminescence characterization of Ge-doped CdTe crystals
spellingShingle Cathodoluminescence characterization of Ge-doped CdTe crystals
Pal, U
538.9
Cadmium Telluride
Photoluminescence
Temperature
Defects
Física de materiales
title_short Cathodoluminescence characterization of Ge-doped CdTe crystals
title_full Cathodoluminescence characterization of Ge-doped CdTe crystals
title_fullStr Cathodoluminescence characterization of Ge-doped CdTe crystals
title_full_unstemmed Cathodoluminescence characterization of Ge-doped CdTe crystals
title_sort Cathodoluminescence characterization of Ge-doped CdTe crystals
dc.creator.none.fl_str_mv Pal, U
Fernández Sánchez, Paloma
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Dieguez, E.
author Pal, U
author_facet Pal, U
Fernández Sánchez, Paloma
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Dieguez, E.
author_role author
author2 Fernández Sánchez, Paloma
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Dieguez, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Cadmium Telluride
Photoluminescence
Temperature
Defects
Física de materiales
topic 538.9
Cadmium Telluride
Photoluminescence
Temperature
Defects
Física de materiales
description Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.
publishDate 1995
dc.date.none.fl_str_mv 1995
1995-08-01
1995
1995-08-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59253
url https://hdl.handle.net/20.500.14352/59253
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Amer Inst Physics
publisher.none.fl_str_mv Amer Inst Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869417236721041408
score 15,223283

Similares en LA Referencia