Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR
This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/1105 |
| Acceso en línea: | https://hdl.handle.net/2117/1105 |
| Access Level: | acceso abierto |
| Palabra clave: | Noise Measurement Microwaves on-wafer noise source excess noise ratio small signal equivalent circuit model noise model calibration electric noise measurement equivalent circuits microwave field effect transistors S-parameters broadband-noise circuit model reverse-biased cold-FET noise-current sources full receiver-noise calibration noise powers 40 GHz Soroll -- Mesurament Microones Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| Sumario: | This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given. |
|---|