Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found...

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Bibliographic Details
Authors: Fontcuberta i Griñó, Josep, Bibes, Manuel, Martínez Perea, Benjamin, Trtik, V., Ferrater Martorell, Cèsar, Sánchez Barrera, Florencio, Varela Fernández, Manuel, 1956-
Format: article
Status:Published version
Publication Date:1999
Country:España
Institution:Universidad de Barcelona
Repository:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/24789
Online Access:https://hdl.handle.net/2445/24789
Access Level:Open access
Keyword:Pel·lícules fines
Anisotropia
Magnetisme
Làsers
Thin films
Anisotropy
Magnetism
Lasers
Description
Summary:We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined.

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