Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate...

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Autores: Polo Trasancos, Ma. del Carmen, Peiró Martínez, Francisca, Cifre, J., Bertomeu i Balagueró, Joan, Puigdollers i González, Joaquim, Andreu i Batallé, Jordi
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1995
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/99362
Acceso en línea:https://hdl.handle.net/2445/99362
Access Level:acceso abierto
Palabra clave:Silici
Deposició química en fase vapor
Pel·lícules fines
Creixement cristal·lí
Silicon
Chemical vapor deposition
Thin films
Crystal growth
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spelling Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour depositionPolo Trasancos, Ma. del CarmenPeiró Martínez, FranciscaCifre, J.Bertomeu i Balagueró, JoanPuigdollers i González, JoaquimAndreu i Batallé, JordiSiliciDeposició química en fase vaporPel·lícules finesCreixement cristal·líSiliconChemical vapor depositionThin filmsCrystal growthPolycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.Institute of Physics (IOP)2016201619952016info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/99362Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://iopscience.iop.org/journal/1742-6596Institute of Physics Conference Series, 1995, vol. 146, p. 503-506cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995http://creativecommons.org/licenses/by/3.0/esinfo:eu-repo/semantics/openAccessoai:recercat.cat:2445/993622026-05-29T05:05:01Z
dc.title.none.fl_str_mv Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
spellingShingle Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Polo Trasancos, Ma. del Carmen
Silici
Deposició química en fase vapor
Pel·lícules fines
Creixement cristal·lí
Silicon
Chemical vapor deposition
Thin films
Crystal growth
title_short Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_full Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_fullStr Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_full_unstemmed Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_sort Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
dc.creator.none.fl_str_mv Polo Trasancos, Ma. del Carmen
Peiró Martínez, Francisca
Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Andreu i Batallé, Jordi
author Polo Trasancos, Ma. del Carmen
author_facet Polo Trasancos, Ma. del Carmen
Peiró Martínez, Francisca
Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Andreu i Batallé, Jordi
author_role author
author2 Peiró Martínez, Francisca
Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Andreu i Batallé, Jordi
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Silici
Deposició química en fase vapor
Pel·lícules fines
Creixement cristal·lí
Silicon
Chemical vapor deposition
Thin films
Crystal growth
topic Silici
Deposició química en fase vapor
Pel·lícules fines
Creixement cristal·lí
Silicon
Chemical vapor deposition
Thin films
Crystal growth
description Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.
publishDate 1995
dc.date.none.fl_str_mv 1995
2016
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/99362
url https://hdl.handle.net/2445/99362
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://iopscience.iop.org/journal/1742-6596
Institute of Physics Conference Series, 1995, vol. 146, p. 503-506
dc.rights.none.fl_str_mv cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995
http://creativecommons.org/licenses/by/3.0/es
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995
http://creativecommons.org/licenses/by/3.0/es
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv Institute of Physics (IOP)
publisher.none.fl_str_mv Institute of Physics (IOP)
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812455

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