Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry

Novel radiation detectors based on 4H-SiC, developed at IMB-CNM, CSIC, have been characterized by means of the ion beam induced charge (IBIC) technique. In this work, two 4H-SiC microdetector designs (planar and 3D), with a thickness of 3 μm and a diameter of 30 μm, were tested using 2.5 MeV He2+ io...

ver descrição completa

Detalhes bibliográficos
Autores: Jiménez Venegas, Marcio, Guardiola, Consuelo, Pellegrini, Giulio, Torres Muñoz, Carmen, García López, Francisco Javier, Jiménez Ramos, María del Carmen, Godignon, Philippe, Fleta, Celeste
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2026
País:España
Recursos:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:dnet:idus________::f577280ac50e866565fc86651972c46b
Acesso em linha:https://hdl.handle.net/11441/185234
https://doi.org/10.1016/j.radmeas.2026.107660
Access Level:acceso abierto
Palavra-chave:4H-SiC
Ion beam induced charge (IBIC)
Collection charge
Microdosimetry
id ES_92e926fd18ffe5a390c027d2ea8d72f6
oai_identifier_str oai:dnet:idus________::f577280ac50e866565fc86651972c46b
network_acronym_str ES
network_name_str España
repository_id_str
spelling Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetryJiménez Venegas, MarcioGuardiola, ConsueloPellegrini, GiulioTorres Muñoz, CarmenGarcía López, Francisco JavierJiménez Ramos, María del CarmenGodignon, PhilippeFleta, Celeste4H-SiCIon beam induced charge (IBIC)Collection chargeMicrodosimetryNovel radiation detectors based on 4H-SiC, developed at IMB-CNM, CSIC, have been characterized by means of the ion beam induced charge (IBIC) technique. In this work, two 4H-SiC microdetector designs (planar and 3D), with a thickness of 3 μm and a diameter of 30 μm, were tested using 2.5 MeV He2+ ions. The energy spectral response indicates diffusion effects at 0 V in the planar detector, which are significantly minimized in the 3D detector thanks to its geometry obtained through a SiC mesa process. The 3D architecture confines the charge collection region and reduces charge contributions from outside of the sensitive volume. Such characteristics highlight the advantages of 3D structures for applications requiring well-defined sensitive volumes, such as microdosimetry. Additionally, the 4H-SiC devices exhibited up to a 26% decrease in charge collection efficiency and a 16% reduction in the frequency mean lineal energy () after irradiation of 2.5 MeV alpha particles at a fluence of 1.55 × 1011 alphas/cm2 at 0 V, attributed to charge collection degradation due to radiation-induced lattice defects that introduce carrier trapping and recombination centers. Applying reverse bias partially restored the initial performance. Therefore, proper calibration becomes essential once the accumulated fluence leads to variations in both energy spectrum and beyond the acceptable deviation limits.ElsevierFísica Aplicada IIFísica Atómica, Molecular y Nuclear2026info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/185234https://doi.org/10.1016/j.radmeas.2026.107660reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésRadiation Measurements, 194, 107660. https://www.sciencedirect.com/science/article/pii/S1350448726000570info:eu-repo/semantics/openAccessoai:dnet:idus________::f577280ac50e866565fc86651972c46b2026-06-17T12:51:07Z
dc.title.none.fl_str_mv Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
title Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
spellingShingle Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
Jiménez Venegas, Marcio
4H-SiC
Ion beam induced charge (IBIC)
Collection charge
Microdosimetry
title_short Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
title_full Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
title_fullStr Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
title_full_unstemmed Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
title_sort Ion-beam-induced charge study of new 4H-SiC detectors for microdosimetry
dc.creator.none.fl_str_mv Jiménez Venegas, Marcio
Guardiola, Consuelo
Pellegrini, Giulio
Torres Muñoz, Carmen
García López, Francisco Javier
Jiménez Ramos, María del Carmen
Godignon, Philippe
Fleta, Celeste
author Jiménez Venegas, Marcio
author_facet Jiménez Venegas, Marcio
Guardiola, Consuelo
Pellegrini, Giulio
Torres Muñoz, Carmen
García López, Francisco Javier
Jiménez Ramos, María del Carmen
Godignon, Philippe
Fleta, Celeste
author_role author
author2 Guardiola, Consuelo
Pellegrini, Giulio
Torres Muñoz, Carmen
García López, Francisco Javier
Jiménez Ramos, María del Carmen
Godignon, Philippe
Fleta, Celeste
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada II
Física Atómica, Molecular y Nuclear
dc.subject.none.fl_str_mv 4H-SiC
Ion beam induced charge (IBIC)
Collection charge
Microdosimetry
topic 4H-SiC
Ion beam induced charge (IBIC)
Collection charge
Microdosimetry
description Novel radiation detectors based on 4H-SiC, developed at IMB-CNM, CSIC, have been characterized by means of the ion beam induced charge (IBIC) technique. In this work, two 4H-SiC microdetector designs (planar and 3D), with a thickness of 3 μm and a diameter of 30 μm, were tested using 2.5 MeV He2+ ions. The energy spectral response indicates diffusion effects at 0 V in the planar detector, which are significantly minimized in the 3D detector thanks to its geometry obtained through a SiC mesa process. The 3D architecture confines the charge collection region and reduces charge contributions from outside of the sensitive volume. Such characteristics highlight the advantages of 3D structures for applications requiring well-defined sensitive volumes, such as microdosimetry. Additionally, the 4H-SiC devices exhibited up to a 26% decrease in charge collection efficiency and a 16% reduction in the frequency mean lineal energy () after irradiation of 2.5 MeV alpha particles at a fluence of 1.55 × 1011 alphas/cm2 at 0 V, attributed to charge collection degradation due to radiation-induced lattice defects that introduce carrier trapping and recombination centers. Applying reverse bias partially restored the initial performance. Therefore, proper calibration becomes essential once the accumulated fluence leads to variations in both energy spectrum and beyond the acceptable deviation limits.
publishDate 2026
dc.date.none.fl_str_mv 2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/185234
https://doi.org/10.1016/j.radmeas.2026.107660
url https://hdl.handle.net/11441/185234
https://doi.org/10.1016/j.radmeas.2026.107660
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Radiation Measurements, 194, 107660.
https://www.sciencedirect.com/science/article/pii/S1350448726000570
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869413523580256256
score 15.228081

Registos relacionados