Silicon microcantilevers with MOSFET detection
We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain sh...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/23660 |
| Acceso en línea: | http://hdl.handle.net/10261/23660 |
| Access Level: | acceso abierto |
| Palabra clave: | Microcantilever MOSFET Piezoresistance Biosensors |
| Sumario: | We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (100) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitivity and resolution of the cantilevers have been tested by applying a force with an AFM tip. Values of 25 μV/pN and 56 pN respectively have been obtained for a force applied at the tip of a cantilever with a length of 200 μm, a width of 24 μm and a silicon thickness of 340 nm. |
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