Cita APA

López Escalante, M. C., Gabás Pérez, M. M., García Vara, I., Barrigón Montañés, E., Rey-Stolle Prado, I., Algora del Valle, C., . . . Ramos Barrado, J. R. (2015). Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies.

Citación estilo Chicago

López Escalante, María Cruz, María Mercedes|||0000-0002-9626-6131 Gabás Pérez, Iván|||0000-0002-9895-2020 García Vara, Enrique Barrigón Montañés, Ignacio|||0000-0002-4919-5609 Rey-Stolle Prado, Carlos|||0000-0003-1872-7243 Algora del Valle, Santiago Palanco López, y José Ramón Ramos Barrado. Differences between GaAs/GaInP and GaAs/AlInP Interfaces Grown By Movpe Revealed By Depth Profiling and Angle-resolved X-ray Photoelectron Spectroscopies. 2015.

Cita MLA

López Escalante, María Cruz, et al. Differences between GaAs/GaInP and GaAs/AlInP Interfaces Grown By Movpe Revealed By Depth Profiling and Angle-resolved X-ray Photoelectron Spectroscopies. 2015.