Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications

[EN] The realization of artificial neural circuits requires synaptic materials and devices that show adaptation at different time scales to modulate signal transmission between neurons according to the desired applications. Sensory-motor and intelligence operation in the brain relies on the dynamica...

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Detalhes bibliográficos
Autores: Bisquert, Juan|||0000-0003-4987-4887, Kim, Soyeon, Shim, Wooyoung, Linares-Barranco, Bernabe
Formato: artículo
Fecha de publicación:2025
País:España
Recursos:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/222593
Acesso em linha:https://riunet.upv.es/handle/10251/222593
Access Level:acceso abierto
Palavra-chave:Synaptic materials
Memristor
Synaptic plasticity
Adaptation
Conductance modulation
Ionic conduction
Electronic conduction
Chemical inductor
Internal state variable
Rectification
Memory effect
Delay response
Voltage spikes
Frequency response
Impedance spectroscopy
Current voltage cycling
Nonlinear dynamics
Neural circuits
Descrição
Resumo:[EN] The realization of artificial neural circuits requires synaptic materials and devices that show adaptation at different time scales to modulate signal transmission between neurons according to the desired applications. Sensory-motor and intelligence operation in the brain relies on the dynamical properties of synapses that adapt to the frequency and synchronization of voltage spikes. The properties of potentiation and depression of the synapse conductivity control the plasticity and adaptation of synapses. Here, the general dynamical properties of ionic or electronic current conduction that form the main rules of synaptic activity are discussed. The basic model requirements of a memristor or chemical inductor to produce an adaptation of conductance to incoming stimuli are established. The synaptic response can be described by the combination of three factors: A conduction process that depends on an internal state variable x; this variable causes rectification at an onset voltage; it also causes a memory, characterized by a delay in response to the stimulus. Diverse diagnosis methods are described that connect the nonlinear time response, the nonlinear cycling of current¿voltage curves, and the linear frequency response of impedance spectroscopy, to assess the adaptation properties.