Simulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO<sub>3</sub> thin films

LaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission...

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Detalles Bibliográficos
Autores: Coll Benejam, Catalina, López Conesa, Lluís, Rebled, J. M. (José Manuel), Magén, César, Sánchez Barrera, Florencio, Fontcuberta i Griñó, Josep, Estradé Albiol, Sònia, Peiró Martínez, Francisca
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/124987
Acceso en línea:https://hdl.handle.net/2445/124987
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Thin films
Descripción
Sumario:LaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission electron microscope - high-angle annular darkfield imaging (STEM-HAADF) contrast analysis and image simulations, Ruddlesden-Popper faulted configurations, with 1/2a<111> relative displacement of defect free perovskite blocks, are atomically modeled and simulated to disentangle the variation of Z-contrast in the experimental images

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