Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the Charge Collection Efficiency (CCE) vs bias volta...

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Autores: García López, Francisco Javier, Jiménez Ramos, María del Carmen, Rodríguez Ramos, Mauricio, Ceballos, Joaquín, Linez, Florence, Raisanen, Jyrki A.
Tipo de documento: artigo
Estado:Versión aceptada para publicación
Data de publicação:2016
País:España
Recursos:Universidad de Sevilla (US)
Repositório:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/167156
Acesso em linha:https://hdl.handle.net/11441/167156
https://doi.org/10.1016/j.nimb.2015.12.029
Access Level:Acceso aberto
Palavra-chave:Si diodes
SiC detector
IBIC
proton irradiation
PAS
Doppler broadening
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spelling Comparative study by IBIC of Si and SiC diodes irradiated with high energy protonsGarcía López, Francisco JavierJiménez Ramos, María del CarmenRodríguez Ramos, MauricioCeballos, JoaquínLinez, FlorenceRaisanen, Jyrki A.Si diodesSiC detectorIBICproton irradiationPASDoppler broadeningThe transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the Charge Collection Efficiency (CCE) vs bias voltages have been analyzed using a modified driftdiffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.ElsevierFísica Atómica, Molecular y NuclearFísica Aplicada II2016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/167156https://doi.org/10.1016/j.nimb.2015.12.029reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372, 143-150.http://dx.doi.org/10.1016/j.nimb.2015.12.029info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1671562026-06-17T12:51:07Z
dc.title.none.fl_str_mv Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
title Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
spellingShingle Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
García López, Francisco Javier
Si diodes
SiC detector
IBIC
proton irradiation
PAS
Doppler broadening
title_short Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
title_full Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
title_fullStr Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
title_full_unstemmed Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
title_sort Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
dc.creator.none.fl_str_mv García López, Francisco Javier
Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Ceballos, Joaquín
Linez, Florence
Raisanen, Jyrki A.
author García López, Francisco Javier
author_facet García López, Francisco Javier
Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Ceballos, Joaquín
Linez, Florence
Raisanen, Jyrki A.
author_role author
author2 Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Ceballos, Joaquín
Linez, Florence
Raisanen, Jyrki A.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Física Atómica, Molecular y Nuclear
Física Aplicada II
dc.subject.none.fl_str_mv Si diodes
SiC detector
IBIC
proton irradiation
PAS
Doppler broadening
topic Si diodes
SiC detector
IBIC
proton irradiation
PAS
Doppler broadening
description The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the Charge Collection Efficiency (CCE) vs bias voltages have been analyzed using a modified driftdiffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.
publishDate 2016
dc.date.none.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/167156
https://doi.org/10.1016/j.nimb.2015.12.029
url https://hdl.handle.net/11441/167156
https://doi.org/10.1016/j.nimb.2015.12.029
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372, 143-150.
http://dx.doi.org/10.1016/j.nimb.2015.12.029
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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