Scanning tunneling spectroscopy study of erbium doped GaSb crystals

Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals th...

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Detalles Bibliográficos
Autores: Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Plaza, J. L., Dieguez, E.
Tipo de recurso: artículo
Fecha de publicación:1999
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58942
Acceso en línea:https://hdl.handle.net/20.500.14352/58942
Access Level:acceso abierto
Palabra clave:538.9
Phase Epitaxy
Cathodoluminescence
Photoluminescence
Microscopy
Excitation
Física de materiales
Descripción
Sumario:Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.

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