CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switc...

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Autores: Munoz-Gamarra, Jose Luis|||0000-0003-3213-0558, Uranga del Monte, Aránzazu|||0000-0002-3593-4060, Barniol i Beumala, Núria|||0000-0001-6325-2166
Formato: artículo
Fecha de publicación:2016
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:167678
Acesso em linha:https://ddd.uab.cat/record/167678
https://dx.doi.org/urn:doi:10.3390/mi7020030
Access Level:acceso abierto
Palavra-chave:CMOS-NEMS
NEMS
NEMS switch
Copper switch
id ES_5d47072f0ea8e95f88d7949bdf2f8ce5
oai_identifier_str oai:ddd.uab.cat:167678
network_acronym_str ES
network_name_str España
repository_id_str
spelling CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS TechnologyMunoz-Gamarra, Jose Luis|||0000-0003-3213-0558Uranga del Monte, Aránzazu|||0000-0002-3593-4060Barniol i Beumala, Núria|||0000-0001-6325-2166CMOS-NEMSNEMSNEMS switchCopper switchThis work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 µm x 100 nm x 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 µm (length) x 0.2 µm (100 nm width + 100 nm gap) = 0.7 µm2 which is the smallest reported one using a top-down fabrication approach. 22016-01-0120162016-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/167678https://dx.doi.org/urn:doi:10.3390/mi7020030reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengopen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/3.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1676782026-06-06T12:50:31Z
dc.title.none.fl_str_mv CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
title CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
spellingShingle CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
Munoz-Gamarra, Jose Luis|||0000-0003-3213-0558
CMOS-NEMS
NEMS
NEMS switch
Copper switch
title_short CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
title_full CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
title_fullStr CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
title_full_unstemmed CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
title_sort CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
dc.creator.none.fl_str_mv Munoz-Gamarra, Jose Luis|||0000-0003-3213-0558
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author Munoz-Gamarra, Jose Luis|||0000-0003-3213-0558
author_facet Munoz-Gamarra, Jose Luis|||0000-0003-3213-0558
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author_role author
author2 Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author2_role author
author
dc.subject.none.fl_str_mv CMOS-NEMS
NEMS
NEMS switch
Copper switch
topic CMOS-NEMS
NEMS
NEMS switch
Copper switch
description This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 µm x 100 nm x 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 µm (length) x 0.2 µm (100 nm width + 100 nm gap) = 0.7 µm2 which is the smallest reported one using a top-down fabrication approach.
publishDate 2016
dc.date.none.fl_str_mv 2
2016-01-01
2016
2016-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/167678
https://dx.doi.org/urn:doi:10.3390/mi7020030
url https://ddd.uab.cat/record/167678
https://dx.doi.org/urn:doi:10.3390/mi7020030
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/3.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409002869227520
score 15.228081

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