Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinho...
| Autores: | , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2004 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/50848 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/50848 |
| Access Level: | Acceso aberto |
| Palavra-chave: | 538.9 Multiple-Quantum Wells Formation Mechanism Structural Defects Band-Gap Heterostructures Luminescence Growth Alloys Dislocations Strain Física de materiales |
| Resumo: | Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM. (C) 2004 American Institute of Physics. |
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