Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8–1300 K and on magnetic fields of up to 28 kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic prec...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/22729 |
| Acceso en línea: | http://hdl.handle.net/11441/22729 https://doi.org/10.1016/j.jeurceramsoc.2010.06.015 |
| Access Level: | acceso abierto |
| Palabra clave: | C. Electrical properties Biomorphic SiC SiC/Si composite Electron microscopy |
| Sumario: | A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8–1300 K and on magnetic fields of up to 28 kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic precursor (MDF – medium density fiberboards). It has been shown that electric transport in MDF-SiC is effected by carriers of n-type with a high concentration of ∼1020 cm−3 and a low mobility of ∼0.4 cm2 V−1 s−1. The specific features in the conductivity of MDF-SiC are explained by quantum effects arising in disordered systems and requiring quantum corrections to conductivity. The TEM studies confirmed the presence of disordering structural features (nanocrystalline regions) in MDF-SiC. The conductivity of MDF-SiC/Si composite originates primarily from Si component in the temperature range 1.8–500 K and since ∼500 to 600 K the contribution of MDF-SiC matrix becomes dominant. |
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