Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane re...

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Autores: Marigó Ferrer, Eloi, Sansa Perna, Marc, Pérez Murano, Francesc|||0000-0002-4647-8558, Uranga del Monte, Aránzazu|||0000-0002-3593-4060, Barniol i Beumala, Núria|||0000-0001-6325-2166
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:185379
Acceso en línea:https://ddd.uab.cat/record/185379
https://dx.doi.org/urn:doi:10.3390/s150717036
Access Level:acceso abierto
Palabra clave:NEMS
CMOS-NEMS
Mechanical resonators
Piezoresistive transduction
Polysilicon nanowires
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spelling Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transductionMarigó Ferrer, EloiSansa Perna, MarcPérez Murano, Francesc|||0000-0002-4647-8558Uranga del Monte, Aránzazu|||0000-0002-3593-4060Barniol i Beumala, Núria|||0000-0001-6325-2166NEMSCMOS-NEMSMechanical resonatorsPiezoresistive transductionPolysilicon nanowiresA top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. 22015-01-0120152015-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/185379https://dx.doi.org/urn:doi:10.3390/s150717036reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2012-32677open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1853792026-06-06T12:50:31Z
dc.title.none.fl_str_mv Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
title Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
spellingShingle Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
Marigó Ferrer, Eloi
NEMS
CMOS-NEMS
Mechanical resonators
Piezoresistive transduction
Polysilicon nanowires
title_short Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
title_full Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
title_fullStr Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
title_full_unstemmed Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
title_sort Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction
dc.creator.none.fl_str_mv Marigó Ferrer, Eloi
Sansa Perna, Marc
Pérez Murano, Francesc|||0000-0002-4647-8558
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author Marigó Ferrer, Eloi
author_facet Marigó Ferrer, Eloi
Sansa Perna, Marc
Pérez Murano, Francesc|||0000-0002-4647-8558
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author_role author
author2 Sansa Perna, Marc
Pérez Murano, Francesc|||0000-0002-4647-8558
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author2_role author
author
author
author
dc.subject.none.fl_str_mv NEMS
CMOS-NEMS
Mechanical resonators
Piezoresistive transduction
Polysilicon nanowires
topic NEMS
CMOS-NEMS
Mechanical resonators
Piezoresistive transduction
Polysilicon nanowires
description A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.
publishDate 2015
dc.date.none.fl_str_mv 2
2015-01-01
2015
2015-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/185379
https://dx.doi.org/urn:doi:10.3390/s150717036
url https://ddd.uab.cat/record/185379
https://dx.doi.org/urn:doi:10.3390/s150717036
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2012-32677
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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