Radiation-induced alloy rearrangement in InxGa1− xN
The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of...
| Autores: | , , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2017 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:dnet:digitalcsic_::aef4fa348a1cc9aa273652f2f6741cb4 |
| Acesso em linha: | http://hdl.handle.net/10261/148400 |
| Access Level: | acceso abierto |
| Palavra-chave: | Defects Gallium Positron annihilation spectroscopy Radiation damage Alloy disorder Alloy structures As-grown Cation vacancies Radiation-induced Si substrates |
| Resumo: | The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation. © 2017 Author(s). |
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