Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

The following article appeared in Journal of Applied Physics 115.3 (2014): 034307 and may be found at (http://scitation.aip.org/content/aip/journal/jap/115/3/10.1063/1.4862742)

Detalhes bibliográficos
Autores: García Núñez, Carlos, Braña de Cal, Alejandro Francisco, Pau Vizcaíno, José Luis, Ghita, D., García Carretero, Basilio Javier, Shen, G., Wilbert, D.S., Kim, S.M., Kung, P.
Tipo de documento: artigo
Data de publicação:2014
País:España
Recursos:Universidad Autónoma de Madrid
Repositório:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglês
OAI Identifier:oai:repositorio.uam.es:10486/665971
Acesso em linha:http://hdl.handle.net/10486/665971
https://dx.doi.org/10.1063/1.4862742
Access Level:Acceso aberto
Palavra-chave:III-V semiconductors
Phonons
Crystal defects
Semiconductor growth
Fluid drops
Física
Descrição
Resumo:The following article appeared in Journal of Applied Physics 115.3 (2014): 034307 and may be found at (http://scitation.aip.org/content/aip/journal/jap/115/3/10.1063/1.4862742)

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