Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator
In this paper, zinc nitride (Zn3N2)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. P...
| Autores: | , , |
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| Formato: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/684714 |
| Acesso em linha: | http://hdl.handle.net/10486/684714 https://dx.doi.org/10.1109/TED.2018.2797254 |
| Access Level: | acceso abierto |
| Palavra-chave: | Flexible devices Spin-on glass (SOG) Thin-film transistors (TFTs) Zinc nitride Física |
| Resumo: | In this paper, zinc nitride (Zn3N2)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm2Vsand an ON/OFF current ratio close to 105after several cycles of bending and being exposed to air ambient for 30 days. |
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