Solution-processed negative gauge factor PtSe2 strain sensors

We undertake electrochemical exfoliation of a 2D semiconductor platinum diselenide, PtSe2 and investigate the piezoresistance response of a solution-processed network. Due to the large PtSe2 aspect ratios, exceeding 300, we achieve conformal flake-to-flake junctions and good inter-flake electrical c...

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Detalles Bibliográficos
Autores: Ilhan, Cansu, Caffrey, Eoin, Liu, Shixin, Munuera Fernández, José María, Sofer, Zdeněk, Plutnarová, Iva, Morris, Michael A, Coleman, Jonathan N, Carey, Tian
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/423724
Acceso en línea:http://hdl.handle.net/10261/423724
https://api.elsevier.com/content/abstract/scopus_id/105012583364
Access Level:acceso abierto
Palabra clave:http://metadata.un.org/sdg/9
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Descripción
Sumario:We undertake electrochemical exfoliation of a 2D semiconductor platinum diselenide, PtSe2 and investigate the piezoresistance response of a solution-processed network. Due to the large PtSe2 aspect ratios, exceeding 300, we achieve conformal flake-to-flake junctions and good inter-flake electrical coupling. Our measured piezoresistive gauge factor is negative (-5.45), consistent with the intrinsic negative gauge factor of PtSe2. This negative network gauge factor implies that strain is transferred from the substrate to the nanosheets. However, detailed modelling shows that the strain transferred to the nanosheets is much smaller than the applied strain, showing that conformal junctions do not necessarily lead to good mechanical coupling between nanosheets. Our model implies that this gauge factor is consistent with a strain transfer efficiency of 8.5%. Our strain sensor also demonstrated a cyclic response for over 1000 cycles, enabling the sensor to be used in future flexible optoelectronics applications.