Structural and magnetic properties of epitaxial delafossite CuFeO2 thin films grown by pulsed laser deposition

Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy c...

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Detalles Bibliográficos
Autores: Joshi, Toyanath, Senty, Tess R, Trappen, Robbyn, Zhou, Jinling, Chen, Song, Ferrari, Piero, Borisov, Pavel, Song, Xueyan, Holcomb, Mikel B, Bristow, Alan D, Cabrera-Oyarzún, Alejandro Leopoldo, Lederman, David
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:Chile
Idioma:inglés
OAI Identifier:oai:repositorio.anid.cl:10533/219445
Acceso en línea:https://hdl.handle.net/10533/219445
Access Level:acceso abierto
Descripción
Sumario:Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO2 films demonstrated a phase transition at T-C approximate to 15 +/- 1K, which agrees with the first antiferromagnetic transition at 14K in the bulk CuFeO2. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis. (C) 2015 AIP Publishing LLC. Keywords. KeyWords Plus:TRIANGULAR LATTICE ANTIFERROMAGNET; PARTIALLY DISORDERED PHASE; ELECTRONIC-STRUCTURE; CU2O; SUBSTRATE; CUGAO2; CUO

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