Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures

We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average cr...

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Autores: Araujo, Clodoaldo Irineu Levartoski de, Khan, Rajwali, Zulfiqar, Khan, Tahirzeb, Rahman, Muneeb Ur, Rehman, Zia Ur, Khan, Aurangzeb, Ullah, Burhan, Fashu, Simbarashe
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:Brasil
Recursos:Universidade Federal de Viçosa (UFV)
Repositorio:LOCUS Repositório Institucional da UFV
Idioma:inglés
OAI Identifier:oai:locus.ufv.br:123456789/22091
Acesso em linha:https://doi.org/10.1007/s10854-018-9018-z
http://www.locus.ufv.br/handle/123456789/22091
Access Level:acceso abierto
Palavra-chave:Oxygen vacancies
Structural
Dielectric
Magnetic properties
(Mn, Co) co-doped ZnO nanostructures
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repository_id_str
spelling Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructuresOxygen vacanciesStructuralDielectricMagnetic properties(Mn, Co) co-doped ZnO nanostructuresWe analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.Journal of Materials Science: Materials in Electronics2018-10-01T12:03:15Z2018-10-01T12:03:15Z2018-06info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlepdfapplication/pdf1573-482Xhttps://doi.org/10.1007/s10854-018-9018-zhttp://www.locus.ufv.br/handle/123456789/22091engVolume 29, Issue 12, p. 9785–9795, June 2018Springer USinfo:eu-repo/semantics/openAccessreponame:LOCUS Repositório Institucional da UFVinstname:Universidade Federal de Viçosa (UFV)instacron:UFVAraujo, Clodoaldo Irineu Levartoski deKhan, RajwaliZulfiqarKhan, TahirzebRahman, Muneeb UrRehman, Zia UrKhan, AurangzebUllah, BurhanFashu, Simbarashe2024-07-12T06:27:32Zoai:locus.ufv.br:123456789/22091Repositório InstitucionalPUBhttps://www.locus.ufv.br/oai/requestfabiojreis@ufv.bropendoar:21452024-07-12T06:27:32LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)false
dc.title.none.fl_str_mv Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
title Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
spellingShingle Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
Araujo, Clodoaldo Irineu Levartoski de
Oxygen vacancies
Structural
Dielectric
Magnetic properties
(Mn, Co) co-doped ZnO nanostructures
title_short Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
title_full Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
title_fullStr Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
title_full_unstemmed Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
title_sort Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
dc.creator.none.fl_str_mv Araujo, Clodoaldo Irineu Levartoski de
Khan, Rajwali
Zulfiqar
Khan, Tahirzeb
Rahman, Muneeb Ur
Rehman, Zia Ur
Khan, Aurangzeb
Ullah, Burhan
Fashu, Simbarashe
author Araujo, Clodoaldo Irineu Levartoski de
author_facet Araujo, Clodoaldo Irineu Levartoski de
Khan, Rajwali
Zulfiqar
Khan, Tahirzeb
Rahman, Muneeb Ur
Rehman, Zia Ur
Khan, Aurangzeb
Ullah, Burhan
Fashu, Simbarashe
author_role author
author2 Khan, Rajwali
Zulfiqar
Khan, Tahirzeb
Rahman, Muneeb Ur
Rehman, Zia Ur
Khan, Aurangzeb
Ullah, Burhan
Fashu, Simbarashe
author2_role author
author
author
author
author
author
author
author
dc.subject.por.fl_str_mv Oxygen vacancies
Structural
Dielectric
Magnetic properties
(Mn, Co) co-doped ZnO nanostructures
topic Oxygen vacancies
Structural
Dielectric
Magnetic properties
(Mn, Co) co-doped ZnO nanostructures
description We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.
publishDate 2018
dc.date.none.fl_str_mv 2018-10-01T12:03:15Z
2018-10-01T12:03:15Z
2018-06
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv 1573-482X
https://doi.org/10.1007/s10854-018-9018-z
http://www.locus.ufv.br/handle/123456789/22091
identifier_str_mv 1573-482X
url https://doi.org/10.1007/s10854-018-9018-z
http://www.locus.ufv.br/handle/123456789/22091
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Volume 29, Issue 12, p. 9785–9795, June 2018
dc.rights.driver.fl_str_mv Springer US
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Springer US
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv pdf
application/pdf
dc.publisher.none.fl_str_mv Journal of Materials Science: Materials in Electronics
publisher.none.fl_str_mv Journal of Materials Science: Materials in Electronics
dc.source.none.fl_str_mv reponame:LOCUS Repositório Institucional da UFV
instname:Universidade Federal de Viçosa (UFV)
instacron:UFV
instname_str Universidade Federal de Viçosa (UFV)
instacron_str UFV
institution UFV
reponame_str LOCUS Repositório Institucional da UFV
collection LOCUS Repositório Institucional da UFV
repository.name.fl_str_mv LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)
repository.mail.fl_str_mv fabiojreis@ufv.br
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score 15.228081

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