Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (sili...

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Detalles Bibliográficos
Autores: Vilela , Pedro H. G., Cota, Edmar F., Pereira, Heverton A., Corrêa, Tomás P., Cupertino, Allan F.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:Brasil
Institución:Associação Brasileira de Eletrônica de Potência (SOBRAEP)
Repositorio:Eletrônica de Potência (Online)
Idioma:inglés
OAI Identifier:oai:ojs2.journal.sobraep.org.br:article/1009
Acceso en línea:https://journal.sobraep.org.br/index.php/rep/article/view/1009
Access Level:acceso abierto
Palabra clave:Hybrid Switch
Silicon IGBT
Silicon Carbide MOSFET
Parallelization
Cost-effective Design
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spelling Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBTHybrid SwitchSilicon IGBTSilicon Carbide MOSFETParallelizationCost-effective DesignThe application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor), highlighting the maincharacteristics and challenges to obtain a cost-effective device. Simulations in PLECS and LT-Spice reveal significant phenomena that arise during the conduction and switching of HyS devices. Experimental tests conducted on a double pulse test circuit validate the initial analyses and compare HyS switching losses with the standard solution based on IGBT. Finally, some insights on this technology are provided. SOBRAEP2025-03-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://journal.sobraep.org.br/index.php/rep/article/view/100910.18618/REP.e202523Eletrônica de Potência; Vol. 30 (2025); e202523Revista Eletrônica de Potência; v. 30 (2025); e2025231984-557X1414-8862reponame:Eletrônica de Potência (Online)instname:Associação Brasileira de Eletrônica de Potência (SOBRAEP)instacron:SOBRAEPenghttps://journal.sobraep.org.br/index.php/rep/article/view/1009/906Copyright (c) 2025 Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertinoinfo:eu-repo/semantics/openAccessVilela , Pedro H. G.Cota, Edmar F.Pereira, Heverton A.Corrêa, Tomás P.Cupertino, Allan F.2025-04-26T22:31:59Zoai:ojs2.journal.sobraep.org.br:article/1009Revistahttps://journal.sobraep.org.br/index.php/rep/ONGhttps://journal.sobraep.org.br/index.php/rep/oaieditor@sobraep.org.br || presidente@sobraep.org.br || renatasousa@utfpr.edu.br1984-557X1414-8862opendoar:2025-04-26T22:31:59Eletrônica de Potência (Online) - Associação Brasileira de Eletrônica de Potência (SOBRAEP)false
dc.title.none.fl_str_mv Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
title Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
spellingShingle Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
Vilela , Pedro H. G.
Hybrid Switch
Silicon IGBT
Silicon Carbide MOSFET
Parallelization
Cost-effective Design
title_short Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
title_full Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
title_fullStr Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
title_full_unstemmed Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
title_sort Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT
dc.creator.none.fl_str_mv Vilela , Pedro H. G.
Cota, Edmar F.
Pereira, Heverton A.
Corrêa, Tomás P.
Cupertino, Allan F.
author Vilela , Pedro H. G.
author_facet Vilela , Pedro H. G.
Cota, Edmar F.
Pereira, Heverton A.
Corrêa, Tomás P.
Cupertino, Allan F.
author_role author
author2 Cota, Edmar F.
Pereira, Heverton A.
Corrêa, Tomás P.
Cupertino, Allan F.
author2_role author
author
author
author
dc.subject.por.fl_str_mv Hybrid Switch
Silicon IGBT
Silicon Carbide MOSFET
Parallelization
Cost-effective Design
topic Hybrid Switch
Silicon IGBT
Silicon Carbide MOSFET
Parallelization
Cost-effective Design
description The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor), highlighting the maincharacteristics and challenges to obtain a cost-effective device. Simulations in PLECS and LT-Spice reveal significant phenomena that arise during the conduction and switching of HyS devices. Experimental tests conducted on a double pulse test circuit validate the initial analyses and compare HyS switching losses with the standard solution based on IGBT. Finally, some insights on this technology are provided.
publishDate 2025
dc.date.none.fl_str_mv 2025-03-06
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://journal.sobraep.org.br/index.php/rep/article/view/1009
10.18618/REP.e202523
url https://journal.sobraep.org.br/index.php/rep/article/view/1009
identifier_str_mv 10.18618/REP.e202523
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv https://journal.sobraep.org.br/index.php/rep/article/view/1009/906
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv SOBRAEP
publisher.none.fl_str_mv SOBRAEP
dc.source.none.fl_str_mv Eletrônica de Potência; Vol. 30 (2025); e202523
Revista Eletrônica de Potência; v. 30 (2025); e202523
1984-557X
1414-8862
reponame:Eletrônica de Potência (Online)
instname:Associação Brasileira de Eletrônica de Potência (SOBRAEP)
instacron:SOBRAEP
instname_str Associação Brasileira de Eletrônica de Potência (SOBRAEP)
instacron_str SOBRAEP
institution SOBRAEP
reponame_str Eletrônica de Potência (Online)
collection Eletrônica de Potência (Online)
repository.name.fl_str_mv Eletrônica de Potência (Online) - Associação Brasileira de Eletrônica de Potência (SOBRAEP)
repository.mail.fl_str_mv editor@sobraep.org.br || presidente@sobraep.org.br || renatasousa@utfpr.edu.br
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score 15,301629

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