Infrared multiphoton dissociation of SiF4: Gas phase reactions of SiF3 with F and H2

The infrared multiphoton dissociation (IRMPD) of pure SiF4 and in mixtures with different gases was studied using a tunable CO2 TEA laser. The initial dissociation step of the IRMPD of SiF4 was found to be the decomposition into SiF3 and F. The gas phase reactions of trifluorosilyl, SiF3, with F and...

ver descrição completa

Detalhes bibliográficos
Autores: Alcaraz, A. N., Codnia, Jorge, Azcárate, María Laura
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:Argentina
Recursos:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/82171
Acesso em linha:http://hdl.handle.net/11336/82171
Access Level:acceso abierto
Palavra-chave:Infrared Multiphoton Dissociation
Reaction Rate
Silicon Tetrafluoride
Trifluorosilyl
https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
Descrição
Resumo:The infrared multiphoton dissociation (IRMPD) of pure SiF4 and in mixtures with different gases was studied using a tunable CO2 TEA laser. The initial dissociation step of the IRMPD of SiF4 was found to be the decomposition into SiF3 and F. The gas phase reactions of trifluorosilyl, SiF3, with F and H2 was investigated. A kinetic scheme was proposed to explain the experimental results. The set of coupled differential equations associated to this scheme was numerically solved. The rate constants of the SiF3+F→SiF4 and SiF3+H 2→SiF3H+H reactions were determined.