Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole...
| Autores: | , , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2013 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositório: | CONICET Digital (CONICET) |
| Idioma: | inglês |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/704 |
| Acesso em linha: | http://hdl.handle.net/11336/704 |
| Access Level: | Acceso aberto |
| Palavra-chave: | ALUMINIUM COMPOUNDS GAS MIXTURES III-V SEMICONDUCTORS SEMICONDUCTOR GROWTH SEMICONDUCTOR THIN FILM SPUTTER DEPOSITION SYNCHROTRONS WIDE BAND GAP SEMICONDUCTORS X-RAY DIFFRACTION X-RAY DIFFRACTOMETERS X-RAY REFLECTION X-RAY SCATTERING https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Resumo: | The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer. © 2013 American Institute of Physics |
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