Enhancement photocatalytic activity of the heterojunction of two-dimensional hybrid semiconductors ZnO/V2O5
In this work, we report the fabrication of the new heterojunction of two 2D hybrid layered semiconductors-ZnO (stearic acid)/VO (hexadecylamine)-and its behavior in the degradation of aqueous methylene blue under visible light irradiation. The optimal photocatalyst efficiency, reached at a ZnO (stea...
| Autores: | , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2018 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositório: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglês |
| OAI Identifier: | oai:ddd.uab.cat:204926 |
| Acesso em linha: | https://ddd.uab.cat/record/204926 https://dx.doi.org/urn:doi:10.3390/catal8090374 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Photocatalysis Heterojunction Two-dimensional semiconductor ZnO V2O5 Methylene blue degradation |
| Resumo: | In this work, we report the fabrication of the new heterojunction of two 2D hybrid layered semiconductors-ZnO (stearic acid)/VO (hexadecylamine)-and its behavior in the degradation of aqueous methylene blue under visible light irradiation. The optimal photocatalyst efficiency, reached at a ZnO (stearic acid)/VO (hexadecylamine) ratio of 1:0.25, results in being six times higher than that of pristine zinc oxide. Reusability test shows that after three photocatalysis cycles, no significant changes in either the dye degradation efficiency loss, nor the photocatalyst structure, occur. Visible light photocatalytic performance observed indicates there is synergetic effect between both 2D nanocomposites used in the heterojunction. The visible light absorption enhancement promoted by the narrower bandgap VO based components; an increased photo generated charge separation favored by extensive interface area; and abundance of hydrophobic sites for dye adsorption appear as probable causes of the improved photocatalytic efficiency in this hybrid semiconductors heterojunction. Estimated band-edge positions for both conduction and valence band of semiconductors, together with experiments using specific radical scavengers, allow a plausible photodegradation mechanism. |
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